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  1. RF Solid-State Vibrating Transistors

    15 Feb 2014 | Online Presentations | Contributor(s): Dana Weinstein

    In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of IBM’s SOI CMOS process, without any post-processing or packaging will be described. ...

  2. Efficiency Enhancement for Nanoelectronic Transport Simulations

    02 Feb 2014 | Papers | Contributor(s): Jun Huang

    PhD thesis of Jun HuangContinual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling....

  3. ECE 612 Lecture 9: Subthreshold Conduction

    25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom

    Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006 teaching.

  4. ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances

    25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom

    Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.

  5. Tunnel FETs - Device Physics and Realizations

    10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.

  6. The Road Ahead for Carbon Nanotube Transistors

    09 Jul 2013 | Online Presentations | Contributor(s): Aaron Franklin

    In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges to realizing a nanotube-driven digital technology will be covered.

  7. Modeling Quantum Transport in Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...

  8. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...

  9. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | Papers | Contributor(s): Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

  10. [Illinois] CNST 2012: III-V Semiconductor Nanowire Arraybased Transistors

    02 Jun 2013 | Online Presentations | Contributor(s): Xiuling Li

  11. ECE 606 Lecture 27: Looking Back and Looking Forward

    20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

  12. ECE 606 Lecture 26: The Future of Computational Electronics

    20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    Future Transistors and Single Atom Transistors; New Modeling Tools (NEMO); nanoHUB: Cloud Computing - Software as a Service

  13. Engineering Disorder in Opto-Electronics

    05 Dec 2012 | Online Presentations | Contributor(s): Jacob B. Khurgin

    GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency operation. This tremendous potential has not been fully realized yet and in this talk it will be shown...

  14. ECE 606 Lecture 25: Modern MOSFETs

    03 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

  15. ECE 606 Lecture 21: MOS Electrostatics

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

  16. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

  17. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

  18. ECE 606 Lecture 24: MOSFET Non-Idealities

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

  19. ECE 606 Lecture 20: Heterojunction Bipolar Transistor

    17 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

  20. ECE 606 Lecture 19: Bipolar Transistors Design

    17 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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