
MuGFET
17 Jan 2008  Tools  Contributor(s): SungGeun Kim, Gerhard Klimeck, Sriraman Damodaran, Benjamin P Haley
Simulate the nanoscale multigateFET structures (finFET and nanowire) using drift diffusion approaches

ECE 656 Lecture 23: Phonon Scattering I
10 Nov 2009  Online Presentations  Contributor(s): Mark Lundstrom
Outline:About phononsElectronphonon couplingEnergymomentum conservationSummary

ECE 656 Lecture 8: Thermoelectric Effects
27 Sep 2009  Online Presentations  Contributor(s): Mark Lundstrom
Outline:IntroductionOne energy level formulationDistribution of energy levelsDiscussionSummary

ECE 606 Lecture 34: MOSCAP Frequency Response
16 Apr 2009  Online Presentations  Contributor(s): Muhammad A. Alam

ECE 659 Lecture 22: Subbands: Minimum Resistance of a Wire
07 Mar 2003  Online Presentations  Contributor(s): Supriyo Datta
Reference Chapter 6.3 and 6.4

ECE 453 Lecture 31: Broadening
12 Nov 2004  Online Presentations  Contributor(s): Supriyo Datta
Reference Chapter 8.1

Lecture 2A: Quantum Transport
20 Aug 2008  Online Presentations  Contributor(s): Supriyo Datta
Figure 2Objective: To extend the simple model from Lectures 1 into the fullfledged Nonequilibrium Green’s Function (NEGF) – Landauer model by introducing a spatial grid of N points and turning numbers like into (NxN) matrices like , with incoherent scattering introduced through . This model...

ECE 612 Lecture 34: Heterostructure FETs
04 Jan 2007  Online Presentations  Contributor(s): Mark Lundstrom

Lecture 2: Potential Energy Functions
05 Jan 2010  Presentation Materials  Contributor(s): Ashlie Martini
Topics:Pair potentialsCoulomb interactionsEmbedded atom modelIntramolecular interactions (bond, angle, torsion)

Nanosphere Optics Lab Field Simulator
09 Aug 2007  Tools  Contributor(s): Baudilio Tejerina, Tyler Takeshita, Logan Ausman, George C. Schatz
Study of the Electric field induced by LightNanoparticle interaction.

ECE 612 Lecture 2: 1D MOS Electrostatics II
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review,2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultrathin body), 5) Summary.

nanoMATERIALS SeqQuest DFT
04 Feb 2008  Tools  Contributor(s): Ravi Pramod Kumar Vedula, Greg Bechtol, Benjamin P Haley, Alejandro Strachan
DFT calculations of materials

Computational Electronics
02 Jun 2006  Courses  Contributor(s): Dragica Vasileska
Scaling of CMOS devices into the nanometer regime leads to increased processing cost. In this regard, the field of Computational Electronics is becoming more and more important because device simulation offers unique possibility to test hypothetical devices which have not been fabricated yet and...

Solar Cell Fundamentals
19 Aug 2011  Courses  Contributor(s): Mark Lundstrom, J. L. Gray, Muhammad A. Alam
The modern solar cell was invented at Bell Labs in 1954 and is currently receiving renewed attention as a potential contribution to addressing the world's energy challenge. This set of five tutorials is an introduction to solar cell technology fundamentals. It begins with a broad overview of...

ECE 606 Lecture 19: Numerical Solution of Transport Equation
29 Mar 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:Basic Transport Equations Gridding and finite differencesDiscretizing equations and boundary conditions Conclusion

ECE 453 Lecture 40: Summary
10 Dec 2004  Online Presentations  Contributor(s): Supriyo Datta

Nanoelectronics and the Meaning of Resistance
20 Aug 2008  Courses  Contributor(s): Supriyo Datta
The purpose of this series of lectures is to introduce the "bottomup" approach to nanoelectronics using concrete examples. No prior knowledge of quantum mechanics or statistical mechanics is assumed; however, familiarity with matrix algebra will be helpful for some topics.Day 1: What and where...

ECE 606 Lecture 27: Introduction to Bipolar Transistors
29 Mar 2009  Online Presentations  Contributor(s): Muhammad A. Alam

Lecture 1: the theory behind molecular dynamics
09 Jan 2008  Online Presentations  Contributor(s): Alejandro Strachan
The first lecture will provide a brief description of classical mechanics and statistical mechanics necessary to understand the physics and approximations behind MD and how to correctly interpret and analyze its results. The power, range of applicability and limitations of MD will be discussed.

Basic operation of a PN diode  Theoretical exercise
02 Aug 2008  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
These exercises help the students better understand the operation of conventional, p+n and short diode.www.eas.asu.edu/~vasileskNSF