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cntFET
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
Version 1.4 - published on 08 May 2008
DOI: 10254/nanohub-r1091.5 cite this
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Citations Non-affiliated (1) | Affiliated (3)
Non-affiliated authors
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Myers-Riggs, R.R.; Roenker, K.P. (2005), "Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport" (Masters Thesis), University of Cincinnati.
Affiliated authors
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Neophytou, N.; Ahmed, S.S.; Klimeck, G. (2007), "Influence of vacancies on metallic nanotube transport properties," Applied Physics Letters, 90, 182119.
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Neophytou, N.; Ahmed, S.S.; Klimeck, G. (2007), "Non-equilibrium Green’s function (NEGF) simulation of metallic carbon nanotubes including vacancy defects," Journal of Computational Electronics, Springer Netherlands, 6, 1-3: pg. 317-320, 09. 1569-8025 (print) 1572-8137 (online). (DOI: 10.1007/s10825-006-0116-4).
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Neophytou, N.; Ahmed, S.S.; Kienle, D.; Lundstrom, M.S.; Klimeck, G. (2006), "Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org -- Non-Equilibrium Green's Function Simulations of the Impact of Atomic Defects on the Performance of Carbon Nanotube Transistors," American Physical Society, APS March Meeting, March 13-17, 2006, 03.