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CNTFET Lab
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
Version 1.6.5 - published on 15 Oct 2019
doi:10.21981/WBMS-PX40 cite this
This tool is closed source.
Citations Non-affiliated (10) | Affiliated (3)
Non-affiliated authors
- Xueyuan Liu, Bing Sun, Kailiang Huang, Chao Feng, Xiao Li, Zhen Zhang, Wenke Wang, Zhi Huang, H Liu, Xingang Zhang, Rui Jia, Hudong Chang, Honggang Liu, (2022), "Use Of Ambipolar Dual-Gate Carbon Nanotube Field-Effect Transistor To Configure Exclusive-OR Gate", ACS Omega, ACS Publications: pg: 8819-8823, (DOI: https://doi.org/10.1021/acsomega.1c07088)
- Jibesh Saha, N. Chakma, Mohd. Hasan, (2016), "Impact Of Scaling Channel Length On The Performances Of Nanoscale FETs", 9th International Conference on Electrical and Computer Engineering, : pg: 123-126, (DOI: 10.1109/ICECE.2016.7853871)
- S Aravind, S Shravan, S Shrijan, R Sanjeev, B Sundari, (2016), "Simulation Of Carbon Nanotube Field Effect Transistors Using NEGF", IOP Conference Series: Materials Science and Engineering, 149, 1: pg: 12183-1-12183-7, (DOI: 10.1088/1757-899X/149/1/012183)
- Anibal Pacheco-Sanchez, S Mothes, Martin Claus, M Schröter, (2015), "Contact Resistance Extraction Methods For CNTFETs", : pg: 298-301, 978-1-4673-7135-3/15
- Sanjeet Sinha, Saurabh Chaudhury, (2013), "Impact Of Body Coefficient And Threshold Voltage On CNTFET With Varying Oxide Thickness", International Journal of Recent Development in Engineering and Technology, 1, 1: pg: 31-35, ISSN 2158-5563 \Online) ISSN 2158-5555 \Print)
- Rakhi Narang, Manoj Saxena, RS Gupta, Mridula Gupta, (2013), "Device And Circuit Level Performance Comparison Of Tunnel FET Architectures And Impact Of Heterogeneous Gate Dielectric", JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, IEEK PUBLICATION CENTER RM# 907 SCIENCE & TECHNOLOGY NEW BLDG, 635-4 YUCKSAM-DONG, SEOUL, KANGNAM-KU 135-703, SOUTH KOREA, 13, 3: pg: 224-236, (DOI: 10.5573/JSTS.2013.13.3.224)
- J. Rosa, (2012), "Using NanoHUB. Org For Teaching And Learning Nanoelectronic Devices In Materials Engineering", Global Engineering Education Conference \EDUCON), 2012 IEEE, Global Engineering Education Conference \EDUCON), 2012 IEEE, : pg: -, IEEE, 978-1-4673-1457-2, (DOI: 10.1109/EDUCON.2012.6201018)
- Loo Koon, (2010), "Carbon Based Devices for Future CMOS Transistors", : pg: -, 07, (DOI: http://hdl.handle.net/123456789/362)
- Rasmita Sahoo, R.R. Mishra, (2009), "Simulations of Carbon Nanotube Field Effect Transistors", International Journal Of Electronic Engineering Research, 1, 2: pg: 117-125, 04
- Rhonda Myers-Riggs, (2007), "Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport", : pg: -, University of Cincinnati, 10
Affiliated authors
- S. Salamat, X. Ho, J.A. Rogers, M. Alam, (2010), "Intrinsic Performance Variability In Aligned-Array CNT Field Effect Transistors", Nanotechnology, IEEE Transactions On, IEEE, 10, 3: pg: 439-444, 1536-125X (DOI: 10.1109/TNANO.2010.2046674 )
- N. Neophytou, Shaikh Ahmed, Gerhard Klimeck, (2007), "Influence of vacancies on metallic nanotube transport properties", Applied Physics Letters, AIP, 90, 32767: pg: 182119-1-182119-3, 05, (DOI: 10.1063/1.2736295)
- N. Neophytou, Shaikh Ahmed, Gerhard Klimeck, (2007), "Non-equilibrium Green's function \NEGF) simulation of metallic carbon nanotubes including vacancy defects", Journal of Computational Electronics, Springer Netherlands, 6, 32767: pg: 317-320, 01, 1569-8025, (DOI: 10.1007/s10825-006-0116-4)