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CNTFET Lab

1. Technical University of Vienna 2. Southern Illinois University Carbondale 3. University of Massachusetts, Amherst 4. Purdue University

Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices

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Version 1.6.1 - published on 26 Apr 2012

doi:10.4231/D32B8VB3H cite this

This tool is closed source.

Recent Questions (9) Ask a question about this tool
866	why the saturation current increases with decrease in diameter of the CNT Asked by rasmita sahoo @ 12:49 AM on 25 Aug 2011 • Open • 2	0 Like
450	what is the threshold voltage Asked by rasmita sahoo @ 11:47 PM on 01 Feb 2010 • Open • 2	0 Like
459	is there a problem with the simulator? Asked by Luis Miguel Díaz Albarrán @ 01:48 AM on 09 Feb 2010 • Open • 1	0 Like
416	How long did users took to run a simulation for CNTFET? It took me like1 hr to run a simulation. Is this normal? Asked by Anonymous @ 06:09 AM on 27 Nov 2009 • Open • 2	0 Like
902	Where, why, and how you used Dyson equation Asked by Anonymous @ 11:30 PM on 20 Oct 2011 • Closed • 1	0 Like
872	Why the effect of temperature is different at on and off-state current? Asked by Shaahin G Shirazi @ 12:39 PM on 02 Sep 2011 • Closed • 1	0 Like
200	why I~vds curve shows higher saturation current for longer channel length? Asked by rasmita sahoo @ 02:54 PM on 19 Jan 2009 • Closed • 1	0 Like
167	What is the Diameter of the nanotube in this simulation? Asked by Anonymous @ 02:59 PM on 05 Nov 2008 • Closed • 1	0 Like
20	i can't find output in simulation of cntfet Asked by bill warner @ 07:00 AM on 09 Oct 2007 • Closed • 2	2 Like