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By Neophytos Neophytou1, Shaikh S. Ahmed2, POLIZZI ERIC3, Gerhard Klimeck4, Mark Lundstrom4

1. Technical University of Vienna 2. Southern Illinois University Carbondale 3. University of Massachusetts, Amherst 4. Purdue University

Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices

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Version 1.6.3 - published on 10 Sep 2015

doi:10.4231/D3222R70F cite this

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Version Released DOI Handle Published
1.6.3 10 Sep 2015 doi:10.4231/D3222R70F yes
1.6.2 11 Jun 2014 doi:10.4231/D3NC5SD2K no
1.6.1 26 Apr 2012 doi:10.4231/D32B8VB3H no
1.6 17 Jun 2011 doi:10.4231/D38K74W5V no
1.5 25 Mar 2010 doi:10.4231/D3ST7DW8P no
1.4 08 May 2008 doi:10.4231/D3BK16P2W no
1.3 21 Dec 2007 doi:10.4231/D3GB1XG6N no
1.2 11 Dec 2007 doi:10.4231/D3M32N90D no
1.1 03 Oct 2007 doi:10.4231/D3QV3C35Q no
1 10 Mar 2006 doi:10.4231/D3VM42W9F no, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.