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CNT Mobility

By Yang Zhao1, Albert Liao1, Eric Pop1

1. University of Illinois at Urbana-Champaign

Simulate field effect carrier mobility in back-gated CNTFET devices at low field

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Version 1.2 - published on 19 Aug 2014

doi:10.4231/D3V698C9Z cite this

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Abstract

CNT Mobility simulates the field effect carrier mobility in back-gated CNT-FET devices at low field. The model is based on calculating the mean free paths with respect to several scattering mechanisms and multi-band transport.

Credits

Yang Zhao, Albert Liao, Eric Pop

Publications

Multiband Mobility in Semiconducting Carbon Nanotubes Y. Zhao, A. Liao, E. Pop, IEEE Elec. Device Lett. 30, 1078 (2009) pdf

Cite this work

Researchers should cite this work as follows:

  • Yang Zhao; Albert Liao; Eric Pop (2014), "CNT Mobility," http://nanohub.org/resources/cntmob. (DOI: 10.4231/D3V698C9Z).

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