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CNT Mobility
Simulate field effect carrier mobility in back-gated CNTFET devices at low field
Version 1.1 - published on 12 Oct 2011
DOI: 10254/nanohub-r6688.2 cite this
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| Category | Tools |
|---|---|
| Abstract | CNT Mobility simulates the field effect carrier mobility in back-gated CNT-FET devices at low field. The model is based on calculating the mean free paths with respect to several scattering mechanisms and multi-band transport. |
| Credits | Yang Zhao, Albert Liao, Eric Pop |
| Publications | Multiband Mobility in Semiconducting Carbon Nanotubes Y. Zhao, A. Liao, E. Pop, IEEE Elec. Device Lett. 30, 1078 (2009) pdf |
| Cite this work | Researchers should cite this work as follows: |
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