CNT Mobility

By Yang Zhao1, Albert Liao1, Eric Pop1

1. University of Illinois at Urbana-Champaign

Simulate field effect carrier mobility in back-gated CNTFET devices at low field

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Version 1.2 - published on 19 Aug 2014

doi:10.4231/D3V698C9Z cite this

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CNT Mobility simulates the field effect carrier mobility in back-gated CNT-FET devices at low field. The model is based on calculating the mean free paths with respect to several scattering mechanisms and multi-band transport.


Yang Zhao, Albert Liao, Eric Pop


Multiband Mobility in Semiconducting Carbon Nanotubes Y. Zhao, A. Liao, E. Pop, IEEE Elec. Device Lett. 30, 1078 (2009) pdf

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Researchers should cite this work as follows:

  • Yang Zhao; Albert Liao; Eric Pop (2014), "CNT Mobility," (DOI: 10.21981/D3V698C9Z).

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