CNT Mobility simulates the field effect carrier mobility in back-gated CNT-FET devices at low field. The model is based on calculating the mean free paths with respect to several scattering mechanisms and multi-band transport.
Yang Zhao, Albert Liao, Eric Pop
Multiband Mobility in Semiconducting Carbon Nanotubes
Y. Zhao, A. Liao, E. Pop, IEEE Elec. Device Lett. 30, 1078 (2009)
Cite this work
Researchers should cite this work as follows:
Yang Zhao; Albert Liao; Eric Pop (2014), "CNT Mobility," http://nanohub.org/resources/cntmob. (DOI: 10.4231/D3V698C9Z).