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Resources: Compact Models

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  1. FET pH Sensor Model 1.0.0

    25 Jul 2014 | Compact Models | Contributor(s): Piyush Dak, Muhammad A. Alam

    The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH. Used with any FET model it characterizes the operation of the device with changes in pH.Model Release Components:FET...

  2. Ambipolar Virtual Source Compact Model for Graphene FETs 1.0.0

    23 Jul 2014 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis

    A physics-based compact model for ambipolar transport in quasi-ballistic graphene transistors. The transport model is supplemented by a self-consistent channel-charge partitioning model that is valid all the way from drift-diffusive to ballistic regime.

  3. Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model 1.0.0

    21 Jul 2014 | Compact Models | Contributor(s): Xuanyao Fong, Sri Harsha Choday, Panagopoulos Georgios, Charles Augustine, Kaushik Roy

    This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.Model Release Components:Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model 1.0.0 in Verilog-A*Purdue Nanoelectronics Research Laboratory...

  4. TAG Solar Cell Model (p-i-n thin film) 1.0.1

    25 Jul 2014 | Compact Models | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam

    The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.

  5. Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model v. 1.0.0

    25 Aug 2014 | Compact Models | Contributor(s): Zizhen Jiang, H.-S. Philip Wong

    The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM. In principle, this model has no limitations on the size of the RRAM cell. The complex process of ion and vacancy migration was simplified into the growth of...

  6. TAG Solar Cell Model (p-i-n thin film) 1.0.0

    02 Apr 2014 | Compact Models | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam

    A new Version of this resource has been released. Please see TAG Solar Cell Model (p-i-n thin film) 1.0.1.The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.

  7. MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0

    09 Jan 2014 | Compact Models | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis

    The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.Model Release Components:MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0 in Verilog-A MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0 Spectre Netlists MIT...

  8. III-V Tunnel FET Model 1.0.0

    29 May 2014 | Compact Models | Contributor(s): Huichu Liu, Vinay Saripalli, Vijaykrishnan Narayanan, Suman Datta

    The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation. Verilog-A models for two types of III-V Tunnel FET, InAs Homojunction Tunnel FET and GaSb-InAs Heterojunction Tunnel, are...

  9. MVS 1.0.1 Nanotransistor Model (Silicon)

    06 Nov 2013 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.Components:MVS Model 1.0.1 in Verilog-AMVS Model Circuit Simulation BenchmarksMVS Model...

  10. MVS 1.0.0 Nanotransistor Model (Silicon)

    26 Aug 2013 | Compact Models | Contributor(s): Dimitri Antoniadis, Shaloo Rakheja

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

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