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  1. MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0

    09 Jan 2014 | Compact Models | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis

    The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications. Model Release Components: MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0 in Verilog-A MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0 Spectre …

  2. MVS 1.0.1 Nanotransistor Model (Silicon)

    06 Nov 2013 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters. Components: MVS Model 1.0.1 in Verilog-A MVS Model Circuit Simulation Benchmarks MVS …

  3. MVS 1.0.0 Nanotransistor Model (Silicon)

    26 Aug 2013 | Compact Models | Contributor(s): Dimitri Antoniadis, Shaloo Rakheja

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

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