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FETToy
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
Version 1.2.2 - published on 16 Oct 2009
DOI: 10254/nanohub-r220.5 cite this
This tool is closed source.
Citations Non-affiliated (16) | Affiliated (13)
Non-affiliated authors
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K. Saghafi; R. Yousefi (2009), "Modeling of Ballistic Carbon Nanotube Transistors by Neural Space Mapping," International Conference on Computer and Electrical Engineering, 2008. ICCEE 2008.: pg. 165-168, 01. 978-0-7695-3504-3. (DOI: 10.1109/ICCEE.2008.123).
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Kazmierski, T.; Zhou, D.; Al-Hashimi, B. (2008), "Efficient Circuit-Level Modeling of balistic CNT using Piecewise Non-Linear Approximation of Mobile Charge Density."
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D Zhou; T Kazmierski; B Al-Hashimi (2008), "VHDL-AMS implementation of a numerical ballistic CNT model for logic circuit simulation," Specification, Verification and Design Languages, 09.
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Pregaldiny, F.; Lallement, C.; Diange, B.; Sallese, M.; Krummenacher, F. (2007), "Compact Modeling of Emerging Technologies with VHDL-AMS," Advances in Design and Specification Languages for Embedded Systems, Springer Netherlands: pg. 5-21. 978-1-4020-6147-9. (DOI: 10.1007/978-1-4020-6149-3_1).
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Hoffa, J.; Roenker, K.P. (2007), "Simulation of Carbon Nanotube Based Field Effect Transistors" (Masters Thesis), University of Cincinnati.
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Kazmierski, T.; Zhou, D.; Al-Hashimi, B. (2007), "A fast, numerical circuit-level model of carbon nanotube transistor," Nanoscale Architechtures, 2007, NANOSARCH 2007, IEEE International Symposium on: pg. 33-37, 10. 978-1-4244-1791-9. (DOI: 10.1109/NANOARCH.2007.4400855).
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Khan, A.; Shah, A.Q.S.; Guo, J. (2007), "Modeling and Simulation of n-Type Carbon Nanotube Field Effect Transistors Using Ca as Contact Electrodes," Mater. Res. Soc. Symp. Proc., 1018.
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O'Conner, I; Liu, J.; Gaffiot, F.; Pregaldiny, F.; Lallement, C.; Maneux, C.; Goguet, J.; Fregonese, S.; Zimmer, T.; Anghel, L.; Dang, T.-T.; Leveugle, R (2007), "CNTFET Modeling and Reconfigurable Logic-Circuit Design," Circuits and Systems I: Regular Papers, IEEE Transactions on [Circuits and Systems : Fundamental Theory and Applications, IEEE Transactions on], 54, 11: pg. 2365-2379, 11.
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Hashempour, H.; Lombardi, F. (2006), "An Efficient and Symbolic Model for Charge Densities in Ballistic Carbon Nanotube FETs," Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on, 1: pg. 23-26, 06. 1-4244-0077-5.
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Kammerer, J.-B.; Lallement, C.; Pregaldiny, F. (2006), "Design-oriented Compact Models for CNTFETs," Design and Test of Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on: pg. 34--39.
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Cosby, R.M. (2006), "Strengthening Nanoscience Education through Multidisciplinary Collaborations," Materials Research Society, Mater. Res. Soc. Symp. Proc., 931.
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Myers-Riggs, R.R.; Roenker, K.P. (2005), "Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport" (Masters Thesis), University of Cincinnati.
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Cosby, R.M.; Joe, Y. (2004), "Undergraduate instruction in nanoscience and nanotechnology," American Physical Society, March Meeting 2004, Montreal, Quebec, Canada, 03.
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Cosby, R.M.; Joe, Y. (2003), "Teaching an introductory course in nanoscience and nanotechnology," American Physical Society, Fall Meeting of the Ohio Section, Case Western Reserve University, Cleveland Ohio, 10.
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Tom J. Kazmierski; Dafeng Zhou; Bashir M. Al-Hashimi; Peter Ashburn, "Numerically efficient modeling of CNT transistors with ballistic and non-ballistic effects for circuit simulation," IEEE Transactions on Nanotechnology.
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Rahmat Bin Sanudin, "Characterisation of Ballistic Carbon Nanotube Field-Effect Transistor" (Masters Thesis).
Affiliated authors
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Amritanshu Palaria; Gerhard Klimeck; Alejandro Strachan (2008), "Structures and energetics of Si nanotubes from molecular dynamics and density functional theory," Physical Review B, 78. (DOI: 10.1103/PhysRevB.78.205315).
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Gerhard Klimeck; Michael McLennan; Mark S. Lundstrom; George B. Adams III (2008), "nanoHUB.org - online simulation and more materials for semiconductors and nanoelectronics in education and research," 8th IEEE Conference on Nanotechnology, 2008. NANO '08: pg. 401-404, 08.
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Amritanshu Palaria; Alejandro Strachan; Gerhard Klimeck (2008), "Electronic Structure and Transport in Silicon Nano-Structures with Non-Ideal Bonding Environments," Proceedings of TECHCON 2008, Austin, TX, 09.
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Mark Lundstrom (2006), "Nanotransistors: A Bottom-Up View," Proceeding of the 36th European Solid-State Device Research Conference: pg. 33-40, 09. 1-4244-0301-4. (DOI: 10.1109/ESSDER.2006.307633).
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Wang, J.; Lundstrom, M.S. (2005), "Device Physics and Simulation of Silicon Nanowire Transistors" (PhD Thesis), Purdue University, 08.
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Wang, J.; Lundstrom, M.S. (2005), "Channel Material Optimization for the Ultimate Planar and Nanowire MOSFETs: A Theoretical Exploration," Device Research Conference, 2005. 63rd DRC. Conference Digest, 1: pg. 241--242, 06.
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Rahman, A.; Klimeck, G.; Lundstrom, M.S. (2005), "Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects," Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International: pg. 4, 12.
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Wang, J.; Rahman, A.; Ghosh, A.W.; Klimeck, G.; Lundstrom, M.S. (2005), "On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors," IEEE Transactions on Electron Devices, 52, 7: pg. 1589-1595, 07. 1557-9646. (DOI: 10.1109/TED.2005.850945).
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Wang, J.; Rahman, A.; Ghosh, A.W.; Klimeck, G.; Lundstrom, M.S. (2005), "Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations," Applied Physics Letters, 86, 093113, 02. (DOI: 10.1063/1.873055).
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Sebastien Goasguen; Michael McLennan; Gerhard Klimeck; Mark S. Lundstrom (2005), "What do Mambo, VNC, UML and Grid computing have in common?," 2005 Linux Cluster Institute Conference, Raleigh, NC, 04.
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Rahman, A.; Guo, J.; Datta, S.; Lundstrom, M.S. (2003), "Theory of ballistic nanotransistors," Electron Devices, IEEE Transactions on, 50, 9: pg. 1853--1864, 09.
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Guo, J.; Datta, S.; Lundstrom, M.S.; Brink, M.; McEuen, P.; Javey, A.; Dai, H.; Kim, H.; McIntyre, P. (2002), "Assessment of Silicon MOS and Carbon Nanotube FET Performance Limits Using a General Theory of Ballistic Transistors," IEEE IEDM.
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Lundstrom, M.S.; Ren, Z. (2002), "Essential physics of carrier transport in nanoscale MOSFETs," Electron Devices, IEEE Transactions on, 49, 10: pg. 133--141, 01.