Citations Non-affiliated (33) | Affiliated (13)

Non-affiliated authors

• R. Marani; A.G. Perri (2012), "A DC Model Of Carbon Nanotube Field Effect Transistor For CAD Applications," International Journal Of Electronics, Taylor & Francis, 99, 3: pg. 437-444. (DOI: 10.1080/00207217.2011.629223).

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• Geunho Cho; Fabrizio Lombardi; Yong Kim (2011), "Modeling Undeposited CNTs for CNTFET Operation," IEEE Transactions On Device And Materials Reliability, Institute of Electrical and Electronics Engineers, Inc., 3 Park Avenue, 17 th Fl New York NY 10016-5997 USA, 11, 2: pg. 263-272, 10. (DOI: 10.1109/TDMR.2011.2123896 ).

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• Wei-Han Lee; Ming-Jer Chen (2011), "Gate Direct Tunneling Current in Uniaxially Compressive Strained nMOSFETs: A Sensitive Measure of Electron Piezo Effective Mass," IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE, 58, 1: pg. 39-45, 11. (DOI: 10.1109/TED.2010.2084578).

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• A. Zahedi; A. Kashaninia; F. Farrokhi (2011), "Carbon Nanotube Field Effect Transistor-Based Gas Sensor For NH3 Detection," 2011 International Conference on Nanotechnology and Biosensors, 25: pg. 54-58. 2010-4618.

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• II Abramov; AE Volkov (2011), "The Influence Of Oxide Materials On The IV Characterictics Of MOSFET's Based On Carbon Nanotubes," Microwave and Telecommunication Technology CriMiCo), 2011 21th International Crimean Conference : pg. 826-827, IEEE. 978-1-4577-0883-1 .

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• Y. Jenberu (2011), "Modeling And Performance Evaluation Of Graphene Nanoribbon Field Effect Transistor": pg. -, Addis Ababa University.

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• Reza Yousefi; M. Shabani (2011), "A Model For Carbon Nanotube FETs In The Ballistic Limit," Microelectronics Journal, Elsevier, 42, 11: pg. 1299-1304. (DOI: 10.1016/j.mejo.2011.08.012).

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• Tom Kazmierski; Dafeng Zhou; Bashir Al-Hashimi; Peter Ashburn (2010), "Numerically efficient modeling of CNT transistors with ballistic and non-ballistic effects for circuit simulation," IEEE TRANSACTIONS ON NANOTECHNOLOGY, IEEE, 9, 1: pg. 99-107, 01. (DOI: 10.1109/TNANO.2009.2017019 ).

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• Reza Yousefi; K Saghafi; M. Moravvej-Farshi (2010), "Neural network model for ballistic carbon nanotube transistors," Nanoelectronics Conference inec), 2010 3rd International: pg. 183-184, IEEE, 03. 978-1-4244-3543-2. (DOI: 10.1109/INEC.2010.5424616).

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• Loo Koon (2010), "Carbon Based Devices for Future CMOS Transistors": pg. -, 07. (DOI: http://hdl.handle.net/123456789/362).

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• Muzaffer Simsir; Niraj Jha (2010), "NanoV: nanowire-based VLSI design," Proceedings Of The 2010 Ieee/acm International Symposium On Nanoscale Architectures: pg. 53-58, IEEE, 06. 978-1-4244-8018-0.

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• Reza Yousefi; K Saghafi; M. Moravvej-Farshi (2010), "Application of Neural Space Mapping for Modeling Ballistic Carbon Nanotube Transistors," Iranian Journal Of Electrical & Electronic Engineering, 6, 2: pg. 70-76, 05.

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• Leonardo Gomez (2010), "Hole transport in strained SiGe-channel MOSFETs : velocity in scaled devices and mobility under applied mechanical strain," N/A: pg. -, Massachusetts Institute of Technology, 06.

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• K Saghafi; Reza Yousefi (2009), "Modeling of Ballistic Carbon Nanotube Transistors by Neural Space Mapping," International Conference On Computer And Electrical Engineering, 2008. ICCEE 2008.: pg. 165-168, IEEE, 01. 978-0-7695-3504-3. (DOI: 10.1109/ICCEE.2008.123).

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• Tom Kazmierski; Dafeng Zhou; Bashir Al-Hashimi (2009), "HSPICE implementation of a numerically efficient model of CNT transistor," Forum On Specification And Design Languages: pg. 1-5, IEEE, 09.

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• Leonardo Gomez; Pouya Hashemi; Judy Hoyt (2009), "Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs," IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE, 56, 11: pg. 2644-2651, 10. (DOI: 10.1109/TED.2009.2031043).

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• Rasmita Sahoo; R.R. Mishra (2009), "Carbon Nanotube Field Effect Transistor: Basic Characterization and Effect of High Dielectric Material," International Journal Of Recent Trends In Engineering, 2, 7: pg. 40-42, 11. 1797-9617.

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• Rasmita Sahoo; R.R. Mishra (2009), "Simulations of Carbon Nanotube Field Effect Transistors," International Journal Of Electronic Engineering Research, 1, 2: pg. 117-125, 04.

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• R. Marani; A.G. Perri (2009), "CNTFET Modelling for Electronic Circuit Design," Microelectronics Technology and Devices - SBMicro 2009, 23, 1: pg. 429-437, ECS, 08. 978-1-56677-737-7. (DOI: 10.1149/1.3183748).

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• Abdellah Aouaj; Ahmed Bouziane; Ahmed Nouacry (2009), "Nanotube carbon transistor CNTFET): I-V and C-V, a qualitative comparison between fettoy simulator and compact model," Multimedia Computing and Systems, 2009. ICMCS '09. International Conference on: pg. 236-239, IEEE, 11. 978-1-4244-3756-6. (DOI: 10.1109/MMCS.2009.5256697).

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• Tom Kazmierski; Dafeng Zhou; Bashir Al-Hashimi (2008), "Efficient Circuit-Level Modeling of balistic CNT using Piecewise Non-Linear Approximation of Mobile Charge Density," DATE '08 Proceedings of the conference on Design, automation and test in Europe : pg. 146-151, IEEE, 04. 978-3-9810801-3-1.

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• Dafeng Zhou; Tom Kazmierski; Bashir Al-Hashimi (2008), "VHDL-AMS implementation of a numerical ballistic CNT model for logic circuit simulation," Specification, Verification And Design Languages: pg. 94-98, IEEE, 09. 978-1-4244-2264-7.

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• Harish Narendar (2008), "A Simulation Study of Enhancement mode Indium Arsenide Nanowire Field Effect Transistor," N/A: pg. 1-113, 12.

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• Ian O'Connor; Junchen Liu; Frédéric Gaffiot; Fabien Prégaldiny; Christophe Lallement; Cristell Maneux; Johnny Goguet; Sebastien Frégonese; Thomas Zimmer; Lorena Anghel; Tong-Trinh Dang; Régis Leveugle (2007), "CNTFET Modeling and Reconfigurable Logic-Circuit Design," IEEE Transactions On Circuits And Systems--i: Regular Papers, IEEE, 54, 11: pg. 2365-2379, 11. 1549-8328. (DOI: 10.1109/TCSI.2007.907835).

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• Aurangzeb Khan; A. Shah; Jihua Guo (2007), "Modeling and Simulation of n-Type Carbon Nanotube Field Effect Transistors Using Ca as Contact Electrodes," Materials Research Society, Mater. Res. Soc. Symp. Proc., 1018: pg. -, 03. (DOI: 10.1557/PROC-1018-EE10-17).

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• Tom Kazmierski; Dafeng Zhou; Bashir Al-Hashimi (2007), "A fast, numerical circuit-level model of carbon nanotube transistor," Nanoscale Architechtures, 2007, Nanosarch 2007, IEEE International Symposium On: pg. 33-37, Ieee, 10. 978-1-4244-1791-9. (DOI: 10.1109/NANOARCH.2007.4400855).

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• Rhonda Myers-Riggs (2007), "Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport": pg. -, University of Cincinnati, 10.

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• Joel Hoffa (2007), "Simulation of Carbon Nanotube Based Field Effect Transistors": pg. 1-73, University of Cincinnati, 05.

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• Ronald Cosby (2006), "Strengthening Nanoscience Education through Multidisciplinary Collaborations," Materials Research Society Symposium Proceedings--Education in Nanoscience and Engineering, 931, 1: pg. 93-98, Cambridge Univ Press, 03. (DOI: 10.1557/PROC-0931-KK04-03).

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• J.-B. Kammerer; C. Lallement; F. Pregaldiny (2006), "Design-oriented Compact Models for CNTFETs," Design And Test Of Systems In Nanoscale Technology, 2006. Dtis 2006. International Conference On: pg. 34-39, IEEE, 09. 0-7803-9727-4.

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• Fabien Prégaldiny; Christophe Lallement; Birahim Diange; Jean-Michel Sallese; Francois Krummenacher (2006), "Compact Modeling of Emerging Technologies with VHDL-AMS," Advances In Design And Specification Languages For Embedded Systems, Springer Netherlands, 3: pg. 38492-, 09. 978-1-4020-6147-9. (DOI: 10.1007/978-1-4020-6149-3_1).

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• Rahmat Sanudin (2005), "Characterisation of Ballistic Carbon Nanotube Field-Effect Transistor": pg. 1-114, 11.

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• Ronald Cosby; Y. Joe (2003), "Teaching an introductory course in nanoscience and nanotechnology," American Physical Society, Fall Meeting Of The Ohio Section, Cleveland Ohio: pg. -, Case Western Reserve University, Cleveland Ohio, 10.

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Affiliated authors

• Amritanshu Palaria; G Klimeck; Alejandro Strachan (2008), "Structures and energetics of Si nanotubes from molecular dynamics and density functional theory," PHYSICAL REVIEW B, 78: pg. -, 11. (DOI: 10.1103/PhysRevB.78.205315).

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• G Klimeck; Michael McLennan; Mark Lundstrom; George Adams III (2008), "nanoHUB.org - online simulation and more materials for semiconductors and nanoelectronics in education and research," 8th Ieee Conference On Nanotechnology, 2008. Nano : pg. 401-404, IEEE, 08.

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• Amritanshu Palaria; Alejandro Strachan; G Klimeck (2008), "Electronic Structure and Transport in Silicon Nano-Structures with Non-Ideal Bonding Environments," Proceedings of TECHCON 2008, Austin, TX: pg. -, Austin, TX, 09.

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• Mark Lundstrom (2006), "Nanotransistors: A Bottom-Up View," Proceeding Of The 36th European Solid-state Device Research Conference: pg. 33-40, IEEE, 09. 1-4244-0301-4. (DOI: 10.1109/ESSDER.2006.307633).

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• J. Wang; A. Rahman; Avik Ghosh; G Klimeck; Mark Lundstrom (2005), "Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations," Applied Physics Letters, 86, 9: pg. 093113-1-093113-3, 02. (DOI: 10.1063/1.873055).

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• J. Wang; A. Rahman; Avik Ghosh; G Klimeck; Mark Lundstrom (2005), "On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors," IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE, 52, 7: pg. 1589-1595, 07. 1557-9646. (DOI: 10.1109/TED.2005.850945).

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• J. Wang; Mark Lundstrom (2005), "Channel Material Optimization for the Ultimate Planar and Nanowire MOSFETs: A Theoretical Exploration," Device Research Conference, 2005. 63rd Drc. Conference Digest, 1: pg. 241-242, IEEE, 06. 0-7803-9040-7.

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• A. Rahman; G Klimeck; Mark Lundstrom (2005), "Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects," Electron Devices Meeting, 2005. Iedm Technical Digest. Ieee International: pg. 604-, IEEE, 12. (DOI: 10.1109/IEDM.2005.1609421).

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• J. Wang (2005), "Device Physics and Simulation of Silicon Nanowire Transistors": pg. 1-149, Purdue University, 08.

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• M. Paulsson; S. Datta (2003), "Thermoelectric effect in molecular electronics," PHYSICAL REVIEW B, APS, 67, 24: pg. 241403-1-241403-4, 06. 1098-0121. (DOI: 10.1103/PhysRevB.67.241403).

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• A. Rahman; Jihua Guo; S. Datta; Mark Lundstrom (2003), "Theory of ballistic nanotransistors," Electron Devices, IEEE Transactions on, IEEE, 50, 9: pg. 1853-1864, 09. (DOI: 10.1109/TED.2003.815366).

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• Mark Lundstrom; X. Ren (2002), "Essential physics of carrier transport in nanoscale MOSFETs," Electron Devices, IEEE Transactions on, IEEE, 49, 1: pg. 133-141, 01. (DOI: 10.1109/16.974760).

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• Jing Guo; S. Datta; Mark Lundstrom; Markus Brink; Paul McEuen; Ali Javey; Hongjie Dai; Hyoungsub Kim; Paul McIntyre (2002), "Assessment of Silicon MOS and Carbon Nanotube FET Performance Limits Using a General Theory of Ballistic Transistors," IEEE IEDM: pg. 711-714, IEEE, 12.

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