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Google/IEEE: updated 22 Apr 2010
Avg. Review: 5.0 out of 5 stars
Citations: 3
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FETToy

By Anisur Rahman1, Jing Wang1, Jing Guo2, Md. Sayed Hasan1, Yang Liu3, Akira Matsudaira4, Shaikh S. Ahmed5, Supriyo Datta1, Mark Lundstrom1

1. Purdue University 2. University of Florida 3. IBM 4. University of Illinois at Urbana-Champaign 5. Southern Illinois University Carbondale

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

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Version 1.2.2 - published on 16 Oct 2009

doi:10.4231/D3736M20Z cite this

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