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FETToy

By Anisur Rahman1, Jing Wang1, Jing Guo2, Md. Sayed Hasan1, Yang Liu3, Akira Matsudaira4, Shaikh S. Ahmed5, Supriyo Datta1, Mark Lundstrom1

1. Purdue University 2. University of Florida 3. IBM 4. University of Illinois at Urbana-Champaign 5. Southern Illinois University Carbondale

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

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Version 1.2.2 - published on 16 Oct 2009

doi:10254/nanohub-r220.5 cite this

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Recent Questions (13) Ask a question about this tool
996 Why is the floating source present in the MOSFET but not in the CNFET?
Asked by Ahsan-Ul-Alam @ 04:18 PM on Open 0
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576 FETToy :Can I use this tool to design circuits
Asked by suba rajan b @ 02:43 AM on Open 1
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419 average velocity vs gate voltage for single and double gate mosfets
Asked by Anonymous @ 07:43 PM on Open 0
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989 substrate of this model
Asked by li len lim @ 09:58 PM on Open 1
0 Like
939 Expansion of the term FETToy
Asked by muthu ram muthuarasan @ 04:53 AM on Open 1
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851 I would like to know about the gate length of nano scale mosfet
Asked by Anonymous @ 06:20 AM on Open 0
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776 equation of Id
Asked by anita narendra bhatt @ 06:32 AM on Open 1
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682 Threshold voltage
Asked by Serhan YAMACLI @ 11:07 AM on Open 0
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667 netlist
Asked by anita narendra bhatt @ 12:53 AM on Open 0
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794 How do I use the floating source potential?
Asked by Ahsan-Ul-Alam @ 01:54 PM on Closed 1
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123 Negative voltages for Fettoy
Asked by Harish Narendar @ 12:12 AM on Closed 2
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97 I would like to know the nantube length used in fettoy simulation. Is it 10nm? Does the L affect the drain current?
Asked by Michael Tan Loong Peng @ 11:34 PM on Closed 2
81 code posts error message for negative threshold voltages
Asked by Gerhard Klimeck @ 02:36 PM on Closed 2
0 Like

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