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This resource has a 9.8 Ranking

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Total: updated 02 Mar, 2010
Users: 1968
Jobs: 32930
Avg. exec. time: 6 secs
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Avg. Review: 5.0 out of 5 stars
Citations: 29
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1968 user(s), detailed usage

4 questions (Ask a question)

7 review(s) (Review this)

0 wish(es) (Add a new wish)

29 Citation(s)

FETToy

By Anisur Rahman1, Jing Wang1, Jing Guo2, Md. Sayed Hasan3, Yang Liu1, Akira Matsudaira4, Shaikh S. Ahmed5, Supriyo Datta1, Mark Lundstrom1, raseong kim1

1. Purdue University, West Lafayette; 2. University of Florida; 3. Purdue University - West Lafayette; 4. University of Illinois at Urbana Champaign; 5. Southern Illinois University at Carbondale;

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

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Version 1.2.2 - published on 16 Oct 2009

DOI: 10254/nanohub-r220.5 cite this

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