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This resource has a 9.7 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Total: updated 10 Dec 2013
Users: 3021
Jobs: 53161
Avg. exec. time: 5 secs
Reviews & Citations
Avg. Review: 5.0 out of 5 stars
Citations: 53
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3021 users, detailed usage

644 users in 58 classes

53 Citation(s)

16 questions (Ask a question)

7 review(s) (Review this)

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FETToy

By Anisur Rahman1, Jing Wang1, Jing Guo2, Md. Sayed Hasan1, Yang Liu3, Akira Matsudaira4, Shaikh S. Ahmed5, Supriyo Datta1, Mark Lundstrom1

1. Purdue University 2. University of Florida 3. IBM 4. University of Illinois at Urbana-Champaign 5. Southern Illinois University Carbondale

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

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Version 1.2.2 - published on 16 Oct 2009

doi:10.4231/D3736M20Z cite this

This tool is closed source.

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  1. 0 Like 0 Dislike

    RAVI CHARAN

    5.0 out of 5 stars

    I`m an undergraduate student… I liked this tool ,this is very much useful to me.. thanks a lot…………..

    Reply Report abuse |

  2. Thuy

    5.0 out of 5 stars

    No comment.

    Reply Report abuse |

  3. 0 Like 0 Dislike

    Hamidreza Hashempour

    4.0 out of 5 stars

    Seems to me that Source/Drain/Gate control parameters (alpha) have incorrect default values for the cntfet module of this tool.

    Since these parameters are the ratio of source/drain/gate capacitance to the total capacitance, their sum must be 1: now their sum is 0.88+0.035+0.035=0.95

    The interactive.m file must be modified.

    Regards,

    Reply Report abuse |

  4. Anonymous

    5.0 out of 5 stars

    No comment.

    Reply Report abuse |

  5. 0 Like 0 Dislike

    manas desai

    5.0 out of 5 stars

    Good way to look at different devices.

    Reply Report abuse |

  6. 0 Like 0 Dislike

    steve mcqueen

    5.0 out of 5 stars

    As an undergraduate student new to the field of nanotechnology I have found the entire Web site full of valuable information and the simulation tools easy to use. Thanks for providing this resource.

    Reply Report abuse |

  7. Zhao Xu

    5.0 out of 5 stars

    No comment.

    Reply Report abuse |

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