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You are here: Home › Resources › Tools › FETToy › Reviews

This resource has a 9.7 Ranking

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Usage Stats
Total: updated 02 Jan, 2012
Users:	2405
Jobs:	40502
Avg. exec. time:	6 secs

Reviews & Citations
Google/IEEE
Avg. Review:	5.0 out of 5 stars
Citations:	43

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2422 user(s), detailed usage

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FETToy

By Anisur Rahman¹, Jing Wang¹, Jing Guo², Md. Sayed Hasan¹, Yang Liu³, Akira Matsudaira⁴, Shaikh S. Ahmed⁵, Supriyo Datta¹, Mark Lundstrom¹

1. Purdue University 2. University of Florida 3. IBM 4. University of Illinois at Urbana-Champaign 5. Southern Illinois University Carbondale

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

You must login before you can run this tool.

Version 1.2.2 - published on 16 Oct 2009

DOI: 10254/nanohub-r220.5 cite this

This tool is closed source.

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5.0 out of 5 stars

RAVI CHARAN @ 03:12 PM on 17 Apr, 2008

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I`m an undergraduate student… I liked this tool ,this is very much useful to me.. thanks a lot…………..

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5.0 out of 5 stars

Thuy @ 10:49 AM on 14 Jun, 2007

No comment.

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4.0 out of 5 stars

Hamidreza Hashempour @ 05:44 PM on 12 Oct, 2006

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Seems to me that Source/Drain/Gate control parameters (alpha) have incorrect default values for the cntfet module of this tool.
Since these parameters are the ratio of source/drain/gate capacitance to the total capacitance, their sum must be 1: now their sum is 0.88+0.035+0.035=0.95
The interactive.m file must be modified.
Regards,

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5.0 out of 5 stars

Anonymous @ 04:48 AM on 27 Sep, 2006

No comment.

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5.0 out of 5 stars

manas desai @ 06:58 PM on 03 May, 2006

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Good way to look at different devices.

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5.0 out of 5 stars

steve mcqueen @ 11:08 AM on 21 Feb, 2006

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As an undergraduate student new to the field of nanotechnology I have found the entire Web site full of valuable information and the simulation tools easy to use. Thanks for providing this resource.

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5.0 out of 5 stars

Zhao Xu @ 11:37 AM on 07 Jan, 2006

No comment.

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