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Home › Resources › Tools › FETToy › Reviews

This resource has a 9.7 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Total: updated 24 May 2013
Users:	2867
Jobs:	49666
Avg. exec. time:	5 secs

Reviews & Citations
Google/IEEE: updated 22 Apr 2010
Avg. Review:	5.0 out of 5 stars
Citations:	3

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	Intermediate	Juniors/Seniors
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2867 users, detailed usage

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FETToy

By Anisur Rahman¹, Jing Wang¹, Jing Guo², Md. Sayed Hasan¹, Yang Liu³, Akira Matsudaira⁴, Shaikh S. Ahmed⁵, Supriyo Datta¹, Mark Lundstrom¹

1. Purdue University 2. University of Florida 3. IBM 4. University of Illinois at Urbana-Champaign 5. Southern Illinois University Carbondale

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

You must login before you can run this tool.

Version 1.2.2 - published on 16 Oct 2009

doi:10.4231/D3736M20Z cite this

This tool is closed source.

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Recommendations

Reviews

0 Like 0 Dislike

RAVI CHARAN @ 03:12 PM on 17 Apr, 2008

5.0 out of 5 stars

I`m an undergraduate student… I liked this tool ,this is very much useful to me.. thanks a lot…………..

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Thuy @ 10:49 AM on 14 Jun, 2007

5.0 out of 5 stars

No comment.

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0 Like 0 Dislike

Hamidreza Hashempour @ 05:44 PM on 12 Oct, 2006

4.0 out of 5 stars

Seems to me that Source/Drain/Gate control parameters (alpha) have incorrect default values for the cntfet module of this tool.
Since these parameters are the ratio of source/drain/gate capacitance to the total capacitance, their sum must be 1: now their sum is 0.88+0.035+0.035=0.95

The interactive.m file must be modified.
Regards,

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Anonymous @ 04:48 AM on 27 Sep, 2006

5.0 out of 5 stars

No comment.

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0 Like 0 Dislike

manas desai @ 06:58 PM on 03 May, 2006

5.0 out of 5 stars

Good way to look at different devices.

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0 Like 0 Dislike

steve mcqueen @ 11:08 AM on 21 Feb, 2006

5.0 out of 5 stars

As an undergraduate student new to the field of nanotechnology I have found the entire Web site full of valuable information and the simulation tools easy to use. Thanks for providing this resource.

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Zhao Xu @ 11:37 AM on 07 Jan, 2006

5.0 out of 5 stars

No comment.

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