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FETToy
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
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Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
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Version 1.3s - published on 27 Mar 2015
doi:10.4231/D38S4JQ3J cite this
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RAVI CHARAN @ on
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I`m an undergraduate student… I liked this tool ,this is very much useful to me.. thanks a lot…………..
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Thuy @ on
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Hamidreza Hashempour @ on
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Seems to me that Source/Drain/Gate control parameters (\alpha) have incorrect default values for the cntfet module of this tool.
Since these parameters are the ratio of source/drain/gate capacitance to the total capacitance, their sum must be 1: now their sum is 0.88+0.035+0.035=0.95
The interactive.m file must be modified.
Regards,
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Anonymous @ on
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manas desai @ on
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Good way to look at different devices.
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steve mcqueen @ on
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As an undergraduate student new to the field of nanotechnology I have found the entire Web site full of valuable information and the simulation tools easy to use. Thanks for providing this resource.
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Zhao Xu @ on
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