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FETToy

By Anisur Rahman1, Jing Wang1, Jing Guo2, Md. Sayed Hasan1, Yang Liu3, Akira Matsudaira4, Shaikh S. Ahmed5, Supriyo Datta1, Mark Lundstrom1

1. Purdue University 2. University of Florida 3. IBM 4. University of Illinois at Urbana-Champaign 5. Southern Illinois University Carbondale

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

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Version 1.3 - published on 26 Feb 2014

doi:10.4231/D3RV0D12Z cite this

Open source: license | download

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  1. 0 Like 0 Dislike

    RAVI CHARAN

    5.0 out of 5 stars

    I`m an undergraduate student… I liked this tool ,this is very much useful to me.. thanks a lot…………..

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  2. 0 Like 0 Dislike

    Thuy

    5.0 out of 5 stars

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  3. 0 Like 0 Dislike

    Hamidreza Hashempour

    4.0 out of 5 stars

    Seems to me that Source/Drain/Gate control parameters (\alpha) have incorrect default values for the cntfet module of this tool.

    Since these parameters are the ratio of source/drain/gate capacitance to the total capacitance, their sum must be 1: now their sum is 0.88+0.035+0.035=0.95

    The interactive.m file must be modified.

    Regards,

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    Anonymous

    5.0 out of 5 stars

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  5. 0 Like 0 Dislike

    manas desai

    5.0 out of 5 stars

    Good way to look at different devices.

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  6. 0 Like 0 Dislike

    steve mcqueen

    5.0 out of 5 stars

    As an undergraduate student new to the field of nanotechnology I have found the entire Web site full of valuable information and the simulation tools easy to use. Thanks for providing this resource.

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  7. 0 Like 0 Dislike

    Zhao Xu

    5.0 out of 5 stars

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