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By Anisur Rahman1, Jing Wang1, Jing Guo2, Md. Sayed Hasan1, Yang Liu3, Akira Matsudaira4, Shaikh S. Ahmed5, Supriyo Datta1, Mark Lundstrom1
1. Purdue University 2. University of Florida 3. IBM 4. University of Illinois at Urbana-Champaign 5. Southern Illinois University Carbondale
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
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Version 1.2.2 - published on 16 Oct 2009
doi:10.4231/D3736M20Z cite this
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