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FETToy

By Anisur Rahman¹, Jing Wang¹, Jing Guo², Md. Sayed Hasan³, Yang Liu¹, Akira Matsudaira⁴, Shaikh S. Ahmed⁵, Supriyo Datta¹, Mark Lundstrom¹, raseong kim¹

1. Purdue University, West Lafayette; 2. University of Florida; 3. Purdue University - West Lafayette; 4. University of Illinois at Urbana Champaign; 5. Southern Illinois University at Carbondale;

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

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Version 1.2.2 - published on 16 Oct 2009

DOI: 10254/nanohub-r220.5 cite this

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Version	Released	DOI Handle	Published
1.2.2	16 Oct 2009	10254/nanohub-r220.5	yes
1.2.1	28 Oct 2008	10254/nanohub-r220.4	no
1.2	09 Jan 2008	10254/nanohub-r220.3	no
1.1	07 Jan 2008	10254/nanohub-r220.2	no
1.0	N/A	10254/nanohub-r220.1	no

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