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FETToy

By Anisur Rahman1, Jing Wang1, Jing Guo2, Md. Sayed Hasan1, Yang Liu3, Akira Matsudaira4, Shaikh S. Ahmed5, Supriyo Datta1, Mark Lundstrom1

1. Purdue University 2. University of Florida 3. IBM 4. University of Illinois at Urbana-Champaign 5. Southern Illinois University Carbondale

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

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Version 1.3 - published on 26 Feb 2014

doi:10.4231/D3RV0D12Z cite this

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    SCREENSHOT #1 SCREENSHOT #2 DEMO #1 SCREENSHOT #3

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Abstract

FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs,FETToy assumes either a single or double gate geometry and for a nanowire and nanotube MOSFETs it assumes a cylindrical geometry. Only the lowest subband is considered, but it is readily modifiable to include multiple subbands.Additional related documents are:

Credits

The underlying theory is described in detail in A. Rahman, J. Guo, S. Datta, and M.
Lundstrom, "Theory of Ballistic Nanotransistors", IEEE Transactions on
Electron Devices, 50, pp. 1853-1864, 2003
. This theory extends on
work by Natori (J. Appl. Phys., 76, 4879-4890, 1994) by including 2D
electrostatics and the so-called "quantum capacitance".

Cite this work

Researchers should cite this work as follows:

  • A. Rahman, J. Guo, S. Datta, and M. Lundstrom, "Theory of Ballistic Nanotransistors", IEEE Transactions on Electron Devices, 50, pp. 1853-1864, 2003.
  • Anisur Rahman; ; Jing Guo; Md. Sayed Hasan; Yang Liu; Akira Matsudaira; Shaikh S. Ahmed; Supriyo Datta; Mark Lundstrom (2014), "FETToy," http://nanohub.org/resources/fettoy. (DOI: 10.4231/D3RV0D12Z).

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