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Rode's Method

By Mohamed Mohamed1, Anjali Bharthuar1, Umberto Ravaioli1

1. University of Illinois at Urbana-Champaign

Calculates low field mobility in III-V semiconductors

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Version 1.2 - published on 19 Sep 2014

doi:10.4231/D3RV0D18V cite this

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Abstract

Rode's method for calculating low Field electron mobility [1,2] is a technique with good convergence and stability properties that provides a straightforward physical interpretation of the exact transport equations. Its simple formalism makes generalization possible to include Fermi statistics, energy band nonparabolicity, s-type and p-type electron wave function admixture, arbitrary time dependence, and combination of various scattering mechanisms. This method gives accurate results for most cases concerning direct semiconductors. The III-V crystals are, for the most part, covalently bonded and possess the zinc-blende structure. Most of the III-V semiconductors are direct and are therefore well suited to the model assumed by Rode's technique.

With this interface, you can change parameters and compare the results of various runs to gain better understanding of which inputs affect low-field electron mobility the most.

Credits

The underlying "rode" program was written by Umberto Ravaioli and Massimo Macucci.

References

  • D. L. Rode, Low-field electron transport, (R. K. Willardson, A. C. Beer), Semiconductors and Semimetals, Academic Press, New York – London, 10, 1–90 (1975).
  • D. L. Rode, Physical Review B, “Electron mobility in direct-gap polar semiconductors”, 2, 1012 (1970).
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    • Mohamed Mohamed; Anjali Bharthuar; Umberto Ravaioli (2007), "Rode's Method," http://nanohub.org/resources/lfmobility. (DOI: 10.4231/D3RV0D18V).

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