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Multi-gate Nanowire FET

By Mincheol Shin

KAIST, Daejeon, Korea

3D simulator for silicon nanowire field effect transistors with multiple gates

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Version 1.6 - published on 08 May 2008

doi:10254/nanohub-r2704.7 cite this

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Usage

Table 1: Overview
Item Average Total
Simulation Users: - 413
Interactive Sessions: - 2,174
Simulation Sessions: - 4,527
Simulation Runs: - 9,414
Wall Clock Time: 8.92 hours 1682.59 days
CPU time: 3.34 hours 629.49 days
Interaction Time: 54.39 minutes 170.98 days

Table 2: Users By Organization Type
# Type Users Percent
1 Educational - University 356 86.2
2 Unidentified 36 8.72
3 National Lab 11 2.66
4 Industry 8 1.94
5 Educational - Pre-College 3 0.73
6 Unemployed 3 0.73
7 Government Agency 2 0.48
Total Users 413 100
Table 3: Users by Country of Residence
# Country Users Percent
1 UNITED STATES 140 33.9
2 INDIA 52 12.59
3 TAIWAN 25 6.05
4 KOREA, REPUBLIC OF 19 4.6
5 CHINA 15 3.63
6 UNITED KINGDOM 11 2.66
7 GERMANY 10 2.42
8 IRAN, ISLAMIC REPUBLIC OF 7 1.69
9 FRANCE 7 1.69
10 SWITZERLAND 7 1.69
Total Users 413 100
Table 4: Top Domains by User Count
# Domains Users Percent
1 Unidentified 151 36.56
2 comcast.net 23 5.57
3 purdue.edu 21 5.08
4 nctu.edu.tw 17 4.12
5 rr.com 12 2.91
6 uc.edu 9 2.18
7 verizon.net 9 2.18
8 vsnl.net.in 7 1.69
9 insightbb.com 7 1.69
10 rcac.purdue.edu 6 1.45
Total Users 413 100

Location of all "Multi-gate Nanowire FET" Users Since Its Posting

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