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The silicon nanowire field effect transistors with multiple gates around the silicon channel that can significantly improve the gate control are considered to be promising candidates for the next generation transistors. In addition to effective suppression of short channel effects, the transistors show excellent current drive and they are also compatible with conventional CMOS processes.
This tool simulates the silicon nanowire field effect transistors (FETs) with multiple gates, such as Gate-all-around, double, tri, pi, and omega gates. The simulator features include 1) effective-mass theory, 2) uncoupled mode-space non-equilibrium Green's function (NEGF), 3) Poisson-transport self-consistent calculation, and 4) quantum ballistic transport. Only NMOS type can be simulated as of now. For the uncoupled mode-space NEGF applied to the nanowire FETs, please refer to the paper by J. Wang et. al. (J. Appl. Phys. 96, 2192, 2004). Users can also refer to the "NanoWireFet" tool on nanoHUB.
Detailed numerical schemes employed in this tool can be found in "Efficient Simulation of Silicon Nanowire Field Effect Transistors and their Scaling Behavior", Mincheol Shin, to be published in J. Appl. Phys. (2006) and "Three Dimensional Quantum Simulation of Multigate Nanowire Field Effect Transistors", Mincheol Shin, which has been submitted to Mathematics and Computers in Simulation (2006), both of which can be downloaded from our web site.
Cite this work
Researchers should cite this work as follows:
M. Shin, "Efficient simulation of silicon nanowire field effect transistors and their scaling behavior," J. Appl. Phys. 101, 024510 (2007).