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- The primary reason to study Metal-Oxide-Silicon (MOS) capacitors is to understand the principle of operation as well as the detailed analysis of the Metal-Oxide-Silicon Field Effect Transistor(MOSFET).
MOSCap simulates the one-dimensional electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures along the growth direction as a function of device size, geometry, oxide charge, temperature, doping concentration, and applied frequency. Among the quantities simulated, the low and high-frequency capacitance-voltage (CV) characteristics and various spatial profiles (e.g., energy band, vertical electric field, charge densities etc.) are of special importance. MOSCap also has an option for Surface Potential plot. It analytically gives the relation between applied gate potential and the semiconductor surface potential.
To better understand the operation of a MOS capacitor, we provide brief tutorials and some typical exercises. These resources are meant to help increase comprehension of the operation of MOS capacitors from a semi-classical viewpoint. For a quantum-mechanical description of the charge in a MOS capacitor channel, please use the SCHRED tool.
- MOSCap is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.
- Improvements / modifications in subsequent version releases:
PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.
Researchers should cite this work as follows: