Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green's function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that this code does NOT treat Schottky-barrier CNTFETs. Additional information on the device geometry and the simulation procedure is described in [1]. The code can readily simulate band-to-band tunneling in CNT-MOSFETs, as well as p-i-n type device architectures, by appropriately modifying the source/drain doping conditions [2,3]. This abstract is taken from the original one from the original MOSCNT MATLAB code

NCN Rappture

Originally created by Jing Guo (Purdue University), 2003. Revised by Siyu Koswatta (Purdue University) and Dmitri Nikonov (Intel), 2004. Modified to be run under Rappture by Gloria Budiman, 2008.

Copyright of all codes contained in this archive by Purdue Research Foundation, 2003. See attached license which governs distribution, copying and modification.

Researchers should cite this work as follows:

• Gloria Wahyu Budiman; Yunfei Gao; Xufeng Wang; Siyu Koswatta; Mark Lundstrom (2010), "Cylindrical CNT MOSFET Simulator," https://nanohub.org/resources/moscntr. (DOI: 10.4231/D3959C736).

  BibTex | EndNote

1. carbon nanotubes
2. CNTFET
3. nanoelectronics
4. transistors