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Intro to MOS-Capacitor Tool

By Emmanuel Jose Ochoa

University of Texas at El Paso

Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

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Version 1.0 - published on 23 Jul 2013

doi:10.4231/D3DF6K35D cite this

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