Intro to MOS-Capacitor Tool

By Emmanuel Jose Ochoa1, Stella Quinones1

1. University of Texas at El Paso

Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

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Version 1.5 - published on 11 Aug 2014

doi:10.4231/D3BG2HB3Z cite this

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Usage

World usage

Location of all "Intro to MOS-Capacitor Tool" Users Since Its Posting

Simulation Users

211

7 16 25 31 37 40 46 52 58 69 81 84 93 98 102 104 110 118 123 136 140 145 158 160 163 166 169 174 182 184 192 197 205 211 211

Users By Organization Type
Type Users
Unidentified 119 (56.4%)
Educational - University 84 (39.81%)
Industry 6 (2.84%)
National Lab 1 (0.47%)
Government Agency 1 (0.47%)
Users by Country of Residence
Country Users
us UNITED STATES 27 (35.53%)
in INDIA 26 (34.21%)
eg EGYPT 4 (5.26%)
cn CHINA 4 (5.26%)
bd BANGLADESH 3 (3.95%)
ru RUSSIAN FEDERATION 3 (3.95%)
es SPAIN 3 (3.95%)
mx MEXICO 2 (2.63%)
sg SINGAPORE 2 (2.63%)
il ISRAEL 2 (2.63%)

Simulation Runs

713

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Overview
Average Total
Wall Clock Time 6.38 hours 88.26 days
CPU time 6.83 seconds 37.79 minutes
Interaction Time 1.98 hours 27.45 days