Intro to MOS-Capacitor Tool

By Emmanuel Jose Ochoa1; Stella Quinones1

1. University of Texas at El Paso

Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

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Version 1.5 - published on 11 Aug 2014

doi:10.4231/D3BG2HB3Z cite this

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World usage

Location of all "Intro to MOS-Capacitor Tool" Users Since Its Posting

Cumulative Simulation Users

952

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Simulation Runs

2,481

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Overview
Average Total
Wall Clock Time 1.97 hours 197.94 days
CPU time 2.04 seconds 1.37 hours
Interaction Time 37.77 minutes 63.34 days