On Monday July 6th, the nanoHUB will be intermittently unavailable due to scheduled maintenance. We apologize for any inconvenience this may cause.
Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.