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MOSFet
Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)
Citations Non-affiliated (5) | Affiliated (2)
Non-affiliated authors
- J. Azariah, U. Satheesh, D. Devaprakasam, (2014), "Study Of Electron Transport In Organic And Inorganic Atomic Monolayer Based MOS/MOSFET", Nanocon 2014, : pg: 1-7
- A. Ortiz-Conde, F.J. Garcia-Sanchez, Juan Muci, A. Teran Barrios, J.J. Liou, C.S. Ho, (2012), "Revisiting MOSFET Threshold Voltage Extraction Methods", Microelectronics Reliability, Elsevier, 53, 1: pg: 90-104, (DOI: 10.1016/j.microrel.2012.09.015)
- A. Ortiz-Conde, F.J. Garcia-Sanchez, (2012), "A Rigorous Classical Solution For The Drain Current Of Doped Symmetric Double-Gate MOSFETs", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE, 59, 9: pg: 1-6, (DOI: 10.1109/TED.2012.2204061)
- W Lau, Peizhen Yang, J Chain, V Ho, C Loh, S Siah, L Chan, (2008), "Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-seminconductor transistors", Microelectronics Reliability, 49, 1: pg: 1-7, 11, (DOI: 10.1016/j.microrel.2008.10.006)
- Rhonda Myers-Riggs, (2007), "Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport", : pg: -, University of Cincinnati, 10
Affiliated authors
- Gerhard Klimeck, M. McLennan, Mark Lundstrom, George Adams III, (2008), "nanoHUB.org - online simulation and more materials for semiconductors and nanoelectronics in education and research", 8th Ieee Conference On Nanotechnology, 2008. Nano , Nanotechnology, 2008. NANO'08. 8th IEEE Conference on, : pg: 401-404, IEEE, 08
- Gerhard Klimeck, (2007), "NanoHUB.org Tutorial: Education Simulation Tools", Nano/micro Engineered And Molecular Systems, 2007. NEMS, Nano/Micro Engineered and Molecular Systems, 2007. NEMS'07. 2nd IEEE International Conference on, : pg: 937-937, IEEE, 01, 1-4244-0610-2, (DOI: 10.1109/NEMS.2007.351992)