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MOSFet
Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)
Version 1.8.5 - published on 01 Nov 2011
doi:10.4231/D30V89G8N cite this
This tool is closed source.
Citations Non-affiliated (4) | Affiliated (2)
Non-affiliated authors
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A. Ortiz-Conde; F.J. Garcia-Sanchez (2012), "A Rigorous Classical Solution For The Drain Current Of Doped Symmetric Double-Gate MOSFETs," IEEE Transactions on Electron Devices, IEEE, 59, 9: pg. 1-6. (DOI: 10.1109/TED.2012.2204061).
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A. Ortiz-Conde; F.J. Garcia-Sanchez; J. Muci; A. Teran Barrios; J.J. Liou; C.S. Ho (2012), "Revisiting MOSFET Threshold Voltage Extraction Methods," Microelectronics Reliability, Elsevier, 53, 1: pg. 90-104. (DOI: 10.1016/j.microrel.2012.09.015).
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W Lau; Peizhen Yang; J Chain; V Ho; C Loh; S Siah; L Chan (2008), "Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-seminconductor transistors," Microelectronics Reliability, 49, 1: pg. 1-7, 11. (DOI: 10.1016/j.microrel.2008.10.006).
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Rhonda Myers-Riggs (2007), "Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport": pg. -, University of Cincinnati, 10.
Affiliated authors
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G Klimeck; M. McLennan; Mark Lundstrom; George Adams III (2008), "nanoHUB.org - online simulation and more materials for semiconductors and nanoelectronics in education and research," 8th Ieee Conference On Nanotechnology, 2008. Nano : pg. 401-404, IEEE, 08.
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G Klimeck (2007), "NanoHUB.org Tutorial: Education Simulation Tools," Nano/micro Engineered And Molecular Systems, 2007. NEMS: pg. 937-937, IEEE, 01. 1-4244-0610-2. (DOI: 10.1109/NEMS.2007.351992).