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Home › Resources › Tools › MOSFet › Reviews

This resource has a 7.6 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Total: updated 02 Jan, 2012
Users:	3309
Jobs:	48827
Avg. exec. time:	6 mins

Reviews & Citations
Google/IEEE
Avg. Review:	4.0 out of 5 stars
Citations:	4

Intermediate-Advanced

Difficulty Level		Target Audience
	K-12	Middle/High School
	Easy	Freshmen/Sophomores
	Intermediate	Juniors/Seniors
	Advanced	Graduate Students
	Expert	PhD Experts

3513 user(s), detailed usage

771 users in 76 class(es)

13 questions (Ask a question)

5 review(s) (Review this)

1 wish(es) (Add a new wish)

MOSFet

By Shaikh S. Ahmed¹, Saumitra Raj Mehrotra², Matteo Mannino², Gerhard Klimeck², Dragica Vasileska³, Xufeng Wang², Himadri Pal², Gloria Wahyu Budiman²

1. Southern Illinois University Carbondale 2. Purdue University 3. Arizona State University

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

You must login before you can run this tool.

Version 1.8.5 - published on 01 Nov 2011

doi:10.4231/D30V89G8N cite this

This tool is closed source.

First-Time User Guide View All Supporting Documents

See also

Recommendations

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5.0 out of 5 stars

Anonymous @ 06:10 AM on 19 Apr, 2008

No comment.

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2.0 out of 5 stars

Haydar MAHMOUD @ 01:11 AM on 09 Apr, 2008

0 -2 Please login to vote.
this simulator is not used for real MOSFET designing, because it lacks the dynamic property implemented by BTE and it doesn’t take into account the QM effects.
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2.0 out of 5 stars

Haydar MAHMOUD @ 01:10 AM on 09 Apr, 2008

0 0 Please login to vote.
this simulator is not used for real MOSFET designing, because it lacks the the dynamic simulation implemented by BTE and doesn’t take into account the QM effects.
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5.0 out of 5 stars

Anonymous @ 08:44 PM on 12 Oct, 2006

+1 0 Please login to vote.
A comprehensive device simulator
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5.0 out of 5 stars

reza @ 02:41 PM on 30 Nov, 2005

No comment.

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