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By Shaikh S. Ahmed1, Saumitra Raj Mehrotra2, SungGeun Kim2, Matteo Mannino2, Gerhard Klimeck2, Dragica Vasileska3, Xufeng Wang2, Himadri Pal2, Gloria Wahyu Budiman2
1. Southern Illinois University Carbondale 2. Purdue University 3. Arizona State University
Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)
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Version 1.9.1 - published on 06 Dec 2017
doi:10.4231/D34T6F54G cite this
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19 Apr 2008
5.0 out of 5 stars
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09 Apr 2008
2.0 out of 5 stars
this simulator is not used for real MOSFET designing, because it lacks the dynamic property implemented by BTE and it doesn’t take into account the QM effects.
12 Oct 2006
A comprehensive device simulator
30 Nov 2005