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This resource has a 7.6 Ranking

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Usage Stats
Total: updated 22 May 2013
Users: 4132
Jobs: 61133
Avg. exec. time: 6 mins
Reviews & Citations
Google/IEEE: updated 22 Apr 2010
Avg. Review: 4.0 out of 5 stars
Citations: 3
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NCN Supported

4132 users, detailed usage

980 users in 99 classes

6 Citation(s)

14 questions (Ask a question)

5 review(s) (Review this)

1 wish(es) (Add a new wish)

MOSFet

By Shaikh S. Ahmed1, Saumitra Raj Mehrotra2, Matteo Mannino2, Gerhard Klimeck2, Dragica Vasileska3, Xufeng Wang2, Himadri Pal2, Gloria Wahyu Budiman2

1. Southern Illinois University Carbondale 2. Purdue University 3. Arizona State University

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

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Version 1.8.5 - published on 01 Nov 2011

doi:10.4231/D30V89G8N cite this

This tool is closed source.

First-Time User Guide View All Supporting Documents

PLG_RESOURCES_WISHLIST

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Recent Wishes (1)
34 use interactive 2d potential viewer
Proposed by Gerhard Klimeck @ on • 2 		  0 Like 0 Dislike Granted

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