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MOSFet

By Shaikh S. Ahmed1, Saumitra Raj Mehrotra2, SungGeun Kim2, Matteo Mannino2, Gerhard Klimeck2, Dragica Vasileska3, Xufeng Wang2, Himadri Pal2, Gloria Wahyu Budiman2

1. Southern Illinois University Carbondale 2. Purdue University 3. Arizona State University

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

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Version 1.8.6 - published on 07 Jan 2014

doi:10.4231/D3WW7704N cite this

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First-Time User Guide View All Supporting Documents

SCREENSHOT #1 SCREENSHOT #2 Double Gate MOSFET SCREENSHOT #4 SCREENSHOT #5 SCREENSHOT #6 SCREENSHOT #7 SCREENSHOT #8

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Abstract

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET).


MOSFet tool simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles.

Teachnig Material and Exercises:

MOSFET Operation Description

MOSFET Exercise: Long channel vs. short channel device

MOSFET Exercise: DIBL effect in short channel devices

MOSFET Exercises: Series Resistance, Punchthrough and Impact Ionization

SOI Exercise: Basic Operation of n-channel SOI Device


Upgrades with subsequent versions:

  1. 8.5: Minor fix regarding the display of 1D plots for the Final Bias.
  2. 8.4: Minor fix regarding the display of 1D plots.
  3. 8.3: Increased the axes limit for 1D plots.
  4. 8.2: Increased Lc (Lsd) limit to 100 um.
  5. 8.1: Fixed minor bug for SOI-MOSFET simulations.
  6. 8: Fixed for oxide dielectric constant (was redundant parameter before).
  7. 6: Added Surface Charge-Vg plot for NMOS and PMOS.
  8. 5: Improved meshing for Imapct Ionization simulations.
  9. 4: Fixed axes units. Added option for Energy balance transport
  10. 3.1: Added status bar for running simulation.
  11. 3: Dynamic contour plot replaces static MATLAB-driver contour plot. This feature fulfills this wish

MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

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PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.

Cite this work

Researchers should cite this work as follows:

  • Shaikh S. Ahmed; Saumitra Raj Mehrotra; SungGeun Kim; Matteo Mannino; Gerhard Klimeck; Dragica Vasileska; Xufeng Wang; Himadri Pal; Gloria Wahyu Budiman (2014), "MOSFet," http://nanohub.org/resources/mosfet. (DOI: 10.4231/D3WW7704N).

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