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Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.
This simulation is designed to give users an interactive visual representation of how a MOSFET would work under different scenarios by asking for input from the user and plotting the resulting graph of drain current against drain voltage. By running simulations to answer a series of guided questions, users will gain a more intuitive feeling for the operation of a MOSFET.
Researchers should cite this work as follows:
- Chen Shang; Sankarsh Ramadas; Tanya Faltens; Derrick Kearney; Krishna Madhavan; (2014) "MOSFETsim", mosfetsat - id #927.