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MOSFET Simulation

By Chen Shang1, Sankarsh Ramadas1, Tanya Faltens1, derrick kearney1, Krishna Madhavan1

1. Purdue University

Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

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Version 1.0 - published on 23 Apr 2014

doi:10.4231/D3MP4VN5D cite this

Open source: license | code unavaialble

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