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MOSFET Simulation

Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

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Version 1.0 - published on 23 Apr 2014

doi:10.4231/D3MP4VN5D cite this

Open source: license | download

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Usage

World usage

Location of all "MOSFET Simulation" Users Since Its Posting

Simulation Users

109

26 57 74 83 91 109

Users By Organization Type
Type Users
Educational - University 57 (52.29%)
Unidentified 50 (45.87%)
National Lab 1 (0.92%)
Industry 1 (0.92%)
Users by Country of Residence
Country Users
us UNITED STATES 24 (48.98%)
in INDIA 9 (18.37%)
ru RUSSIAN FEDERATION 3 (6.12%)
cn CHINA 3 (6.12%)
br BRAZIL 2 (4.08%)
kr KOREA, REPUBLIC OF 2 (4.08%)
es SPAIN 2 (4.08%)
bd BANGLADESH 2 (4.08%)
sa SAUDI ARABIA 1 (2.04%)
fr FRANCE 1 (2.04%)

Simulation Runs

650

248 395 450 506 533 650
Overview
Average Total
Wall Clock Time 5.17 hours 81.14 days
CPU time 2.62 seconds 16.48 minutes
Interaction Time 14.57 minutes 3.82 days

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