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MOSFET Simulation

By Chen Shang1, Sankarsh Ramadas1, Tanya Faltens1, derrick kearney1, Krishna Madhavan1

1. Purdue University

Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

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Version 1.0 - published on 23 Apr 2014

doi:10.4231/D3MP4VN5D cite this

Open source: license | download

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World usage

Location of all "MOSFET Simulation" Users Since Its Posting

Simulation Users


26 57 74 83 91 115 157 180 196 220 242 242

Users By Organization Type
Type Users
No data found for the month of 2015-03
Users by Country of Residence
Country Users
No data found for the month of 2015-03

Simulation Runs


248 395 450 506 533 665 784 861 1064 1135 1226 1226
Average Total
Wall Clock Time 3.27 hours 96.6 days
CPU time 2.53 seconds 29.94 minutes
Interaction Time 12.47 minutes 6.14 days, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.