Support

Support Options

Submit a Support Ticket

 

MOSFET Simulation

Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

Launch Tool

You must login before you can run this tool.

Version 1.0 - published on 23 Apr 2014

doi:10.4231/D3MP4VN5D cite this

Open source: license | download

View All Supporting Documents

Usage

World usage

Location of all "MOSFET Simulation" Users Since Its Posting

Simulation Users

177

26 57 74 83 91 115 157 177

Users By Organization Type
Type Users
Unidentified 88 (49.72%)
Educational - University 87 (49.15%)
Industry 1 (0.56%)
National Lab 1 (0.56%)
Users by Country of Residence
Country Users
us UNITED STATES 37 (50.68%)
in INDIA 15 (20.55%)
ru RUSSIAN FEDERATION 3 (4.11%)
cn CHINA 3 (4.11%)
my MALAYSIA 3 (4.11%)
bd BANGLADESH 3 (4.11%)
kr KOREA, REPUBLIC OF 3 (4.11%)
br BRAZIL 2 (2.74%)
hr CROATIA 2 (2.74%)
mx MEXICO 2 (2.74%)

Simulation Runs

852

248 395 450 506 533 665 784 852
Overview
Average Total
Wall Clock Time 4.58 hours 87.5 days
CPU time 2.66 seconds 20.33 minutes
Interaction Time 13.66 minutes 4.36 days

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.