Support Options

Submit a Support Ticket


Magnetic Tunnel Junction Lab

By Samiran Ganguly1, Deepanjan Datta2, Chen Shang1, Sankarsh Ramadas1, Sayeef Salahuddin1, Supriyo Datta1

1. Purdue University 2. Indian Association for the Cultivation of Science

Calculate Resistance, Tunneling Magneto Resistance, Spin Torques, and Switching characteristics of a Magnetic Tunnel Junction

Launch Tool

You must login before you can run this tool.

Version 1.1 - published on 18 Apr 2014

doi:10.4231/D30Z70X0J cite this

This tool is closed source.

View All Supporting Documents

    Tool Launch Entering values Resistance: AP and P Tunnel Magneto Resistance Spin Transfer Torque: In-Plane, Out-Of-Plane



Published on


The Magnetic Tunnel Junction (MTJ) is a spintronic device that is gaining attention in hybrid- and post-silicon memory and logic circuit designs. The device consists of two thin film ferromagnets separated by a nanometer thin oxide layer. The resistance of this device depends on the relative angle between the magnetizations of the two ferromagnets, and can be used to create a memory device by storing information as the relative configuration (anti-parallel and parallel) of the angle. Using the phenomena of spin transfer torque, this angle can be controlled and used to write information as well, making MTJ capable of working as a solid state non-volatile memory. Other features like low power operation, radiation hardening, high projected relatibility and size scalability make MTJs a candidate for “universal memory”.

We present a Non-Equilibrium Green’s Function (NEGF) based quantum transport simulator that calculates critical transport properties of an MTJ viz. Parallel and Anti-Parallel Resistances, Tunneling Magneto-Resistance (TMR) and Spin Transfer Torque (STT, both in-plane and out of the plane), using material parameters and geometric dimensions of an MTJ device as inputs. The underlying model is the first model to quantitatively benchmark multiple experimental data and was published in a peer reviewed journal.

Sponsored by



D. Datta, B. Behin-Aein, S. Datta, and S. Salahuddin, “Voltage Asymmetry of Spin-Transfer Torques,” IEEE Transactions on Nanotechnology, vol. 11, no. 2, pp. 261–272, 2012.

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.