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By M. P. Anantram1, Shaikh S. Ahmed2, alexei svizhenko3, Derrick Kearney4, Gerhard Klimeck4

1. NASA 2. Southern Illinois University Carbondale 3. Stanford University 4. Purdue University

Simulates ballistic transport in 2D MOSFET devices

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Version 1.6.1 - published on 10 Sep 2015

doi:10.4231/D3X921K5T cite this

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1400 supports any material other then Si?
Asked by Anonymous Open 0
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213 why there is difference in results between this tool and Nonamos at Tsi=3nm
Asked by Mohammed M. El-Banna Open 1, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.