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NanoFET
Simulates ballistic transport in 2D MOSFET devices
Version 1.5 - published on 17 Jun 2011
doi:10254/nanohub-r1090.6 cite this
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why there is difference in results between this tool and Nonamos at Tsi=3nm Asked by Mohammed Mahmoud El Banna @ 12:12 PM on 15 Feb 2009 • Open • 1 |
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