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NanoFET

By M. P. Anantram1, Shaikh S. Ahmed2, alexei svizhenko3, Derrick Kearney4, Gerhard Klimeck4

1. NASA 2. Southern Illinois University Carbondale 3. Stanford University 4. Purdue University

Simulates ballistic transport in 2D MOSFET devices

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Version 1.6 - published on 12 Jun 2014

doi:10.4231/D3CZ32588 cite this

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World usage

Location of all "NanoFET" Users Since Its Posting

Simulation Users

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Users By Organization Type
Type Users
Educational - University 858 (85.29%)
Unidentified 68 (6.76%)
Industry 40 (3.98%)
National Lab 17 (1.69%)
Educational - Pre-College 12 (1.19%)
Government Agency 6 (0.6%)
Unemployed 4 (0.4%)
Military 1 (0.1%)
Users by Country of Residence
Country Users
us UNITED STATES 380 (51.14%)
in INDIA 142 (19.11%)
cn CHINA 51 (6.86%)
tw TAIWAN 33 (4.44%)
kr KOREA, REPUBLIC OF 28 (3.77%)
de GERMANY 28 (3.77%)
co COLOMBIA 28 (3.77%)
ca CANADA 21 (2.83%)
bd BANGLADESH 19 (2.56%)
gb UNITED KINGDOM 13 (1.75%)

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