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By M. P. Anantram1, Shaikh S. Ahmed2, alexei svizhenko3, Derrick Kearney4, Gerhard Klimeck4

1. NASA 2. Southern Illinois University Carbondale 3. Stanford University 4. Purdue University

Simulates ballistic transport in 2D MOSFET devices

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Version 1.6.1 - published on 10 Sep 2015

doi:10.4231/D3X921K5T cite this

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Version Released DOI Handle Published
1.6.1 10 Sep 2015 doi:10.4231/D3X921K5T yes
1.6 12 Jun 2014 doi:10.4231/D3CZ32588 no
1.5 17 Jun 2011 doi:10.4231/D34T6F314 no
1.4 08 May 2008 doi:10.4231/D3028PC5G no
1.3 20 Dec 2007 doi:10.4231/D33R0PS7M no
1.2 11 Dec 2007 doi:10.4231/D37H1DM0W no
1.1 03 Oct 2007 doi:10.4231/D3C824D41 no
1 10 Mar 2006 doi:10.4231/D3H12V68S no, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.