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NP Junction: Short-Base Depletion Approximation

University of Illinois at Urbana-Champaign

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Version 2.0 - published on 08 Sep 2008

DOI: 10254/nanohub-r5123.2 cite this

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Abstract	This model is valid under the assumption that the width of the p-region is sufficiently small so that injected minority carriers diffuse to the metal contact before recombining with majority carriers. ( Depletion Width << Diffusion Length ) The NP Junction: Short-Base Depletion Approximation tool is used to approximately calculate, and then graph, the distribution in an n- and p-type junction of : Charge Density Electric Field Intensity Electrostatic Potential Excess Carrier Concentration Current Density Current Density Amplitude Depletion Width Max Excess Hole Concentration Max Excess Electrons Concentration Junction Capacitance 1 / C^2
References	Si and Ge intrinsic carrier values are based on Thurmond's paper: The Standard Thermodynamics Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP GaAs intrinsic carrier values are based on Blakemore's paper: Semiconducting and other major properties of gallium arsenide For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition
Cite this work	Researchers should cite this work as follows: Nahil Sobh; Mohamed Mohamed (2008), "NP Junction: Short-Base Depletion Approximation," DOI: 10254/nanohub-r5123.2. (DOI: 10254/nanohub-r5123.2). BibTex \| EndNote
Tags	depletion depletion approximation nanoelectronics np np-junction pn pn-junction short base