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OMEN_FET

By Neerav Kharche, Mathieu Luisier, George A. Howlett, Gerhard Klimeck, Mehdi Salmani Jelodar

Purdue University

Simulates High Electron Mobility Transistor (HEMT), single-gate MOSFET, and double-gate MOSFET in effective mass approximation

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Version 1.1.0 - published on 05 Jan 2011

doi:10254/nanohub-r6637.5 cite this

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Recent Questions (2) Ask a question about this tool
654	Can you please tell me how to give the doping concentration?The doping concentration i give and which comes in simulation are not same Asked by ARUN RAMAKRISHNAN @ 03:12 AM on 07 Nov 2010 • Open • 0	0 Like
526	How usable is OMEN_FET for bilayer graphene or graphene on hex boron nitride simulations? Asked by Frank Overton @ 05:43 PM on 20 Apr 2010 • Open • 0	0 Like

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