Support

Support Options

Submit a Support Ticket

 
Home › Resources › Tools › OMEN_FET › Reviews
This resource has a 9.4 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Total: updated 02 Jan, 2012
Users: 169
Jobs: 1612
Avg. exec. time: 4 hours
Reviews & Citations
Google/IEEE
Avg. Review: 0.0 out of 5 stars
Citations: 2
  •  
  •  
  •  
  •  
  •  
  • Advanced-Expert
Difficulty Level Target Audience
  •  
  •  
  •  
  •  
  •  
 K-12 Middle/High School
  •  
  •  
  •  
  •  
  •  
 Easy Freshmen/Sophomores
  •  
  •  
  •  
  •  
  •  
 Intermediate Juniors/Seniors
  •  
  •  
  •  
  •  
  •  
 Advanced Graduate Students
  •  
  •  
  •  
  •  
  •  
 Expert PhD Experts

Learn more ›

187 user(s), detailed usage

1 users in 1 class(es)

2 Citation(s)

2 questions (Ask a question)

0 review(s) (Review this)

0 wish(es) (Add a new wish)

OMEN_FET

Simulates High Electron Mobility Transistor (HEMT), single-gate MOSFET, and double-gate MOSFET in effective mass approximation

Launch Tool

You must login before you can run this tool.

Version 1.1.0 - published on 05 Jan 2011

doi:10254/nanohub-r6637.5 cite this

This tool is closed source.

View All Supporting Documents

See also

No results found.

Write a review Reviews

No reviews found. Be the first to review this resource!

Get Help

Get Involved

Legal

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies.