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1 users in 1 class(es)

OMEN_FET

Purdue University

Simulates High Electron Mobility Transistor (HEMT), single-gate MOSFET, and double-gate MOSFET in effective mass approximation

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Version 1.1.0 - published on 05 Jan 2011

doi:10254/nanohub-r6637.5 cite this

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Table 2: Users By Organization Type
#	Type	Users	Percent
1	Educational - University	140	74.87
2	Unidentified	34	18.18
3	National Lab	10	5.35
4	Industry	7	3.74
5	Unemployed	4	2.14
6	Educational - Pre-College	3	1.6
	Total Users	187	100

Table 3: Users by Country of Residence
#	Country	Users	Percent
1	UNITED STATES	69	36.9
2	INDIA	15	8.02
3	BANGLADESH	10	5.35
4	CHINA	7	3.74
5	ITALY	6	3.21
6	KOREA, REPUBLIC OF	5	2.67
7	CANADA	5	2.67
8	MALAYSIA	4	2.14
9	RUSSIAN FEDERATION	3	1.6
10	BRAZIL	3	1.6
	Total Users	187	100

Table 4: Top Domains by User Count
#	Domains	Users	Percent
1	Unidentified	67	35.83
2	purdue.edu	18	9.63
3	comcast.net	11	5.88
4	verizon.net	8	4.28
5	hubzero.org	7	3.74
6	berkeley.edu	5	2.67
7	intel.com	4	2.14
8	mcgill.ca	4	2.14
9	vanderbilt.edu	3	1.6
10	stanford.edu	3	1.6
	Total Users	187	100

Location of all "OMEN_FET" Users Since Its Posting