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Simulates High Electron Mobility Transistor (HEMT), single-gate MOSFET, and double-gate MOSFET in effective mass approximation

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Version 1.2.1 - published on 29 Sep 2015

doi:10.4231/D3H41JN72 cite this

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Version Released DOI Handle Published
1.2.1 29 Sep 2015 doi:10.4231/D3H41JN72 yes
1.2.0 30 Sep 2014 doi:10.4231/D3SN0151Z no
1.1.0 05 Jan 2011 doi:10.4231/D34F1MJ1B no
1.0.2 06 Apr 2010 doi:10.4231/D3CJ87K51 no
1.0.1 03 Dec 2009 doi:10.4231/D3S756J9K no
1.0.0 16 Sep 2009 doi:10.4231/D39Z90B7V no
1.0 08 Sep 2009 doi:10.4231/D3GQ6R200 no, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.