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OMEN_FET

Simulates High Electron Mobility Transistor (HEMT), single-gate MOSFET, and double-gate MOSFET in effective mass approximation

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Version 1.2.0 - published on 30 Sep 2014

doi:10.4231/D3SN0151Z cite this

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    Device geometry IdVg characteristics Potential distribution Current flow

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Abstract

The standard techniques such as drift-diffusion cannot capture quantization of the energy levels resulting from the strong confinement of the electrons in a quantum well channel and tunneling currents in nanoscale transistors. Thus the need to develop modeling techniques to aid experiments and explore novel device designs arises. OMEN_HFET employs a real-space effective mass 2-D Schrödinger-Poisson solver [1] to analyze transport characteristics of nanoscale transistors. A full quantum mechanical treatment of source, drain and gate contacts enables OMEN_HFET to simulate entire bias regime i.e. gate leakage, subthreshold as well as high gate bias regime. For computational reasons the simulation domain is restricted to the gate contact region and source/drain contacts are modeled via two series resistances. The simulation approach is verified for recently reported InAs HEMTs where a good quantitative match to experimental data is obtained [2]. The device simulator can be used to gain deeper insight into the electron transport and thereby to design the device for optimal performance when scaled to nanometer regime.



Modifications
Version 1.1.0:

     1. Added Horizontal electron density  along transport direction
     2. Restricted parameters values to meaningful ones
     3. Modifications in input deck to remove some minor bugs

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OMEN HFET uses effective mass based OMEN code to calculate transfer characteristics and internal quantities like charge distributions, current densities etc. Real-space Schrödinger and Poisson equations are solved self-consistently using the effective mass approximation and a 2-D finite-difference grid. In the Poisson solver, Dirichlet boundary conditions are applied at the Gate and the Substrate contacts while Neumann boundary conditions are applied everywhere else.

Credits

N. Kharche... GUI development and benchmarking with experimental data
M. Luisier...Core C++ simulator development
G. Howlett...Flow visualizer development
G. Klimeck...GUI requirements and usage scenario requirements
M. Salmani-Jelodar...GUI and back scripts modifications for V 1.1.0

Sponsored by

NCN@Purdue, MSD FCRP, SRC

References

The transport simulator is described in: Two-Dimensional Tunneling Effects on the Leakage Current of MOSFETs With Single Dielectric and High-κ Gate Stacks, M. Luisier and A. Schenk, IEEE Trans. on Elec. Dev., Vol. 55, p.1494, (2008).

Benchmarks with experiments are described in: Performance Analysis of Ultra- Scaled InAs HEMTs", N. Kharche, G. Klimeck, D. H. Kim, J. A. del Alamo, M. Luisier, IEDM Tech. Digest, (2009).

Cite this work

Researchers should cite this work as follows:

  • The transport simulator is described in: Two-Dimensional Tunneling Effects on the Leakage Current of MOSFETs With Single Dielectric and High-κ Gate Stacks, M. Luisier and A. Schenk, IEEE Trans. on Elec. Dev., Vol. 55, p.1494, (2008).

    Benchmarks with experiments are described in: Performance Analysis of Ultra- Scaled InAs HEMTs", N. Kharche, G. Klimeck, D. H. Kim, J. A. del Alamo, M. Luisier, Accepted for publication in IEDM 2009

  • Neerav Kharche; Mathieu Luisier; George A. Howlett; Gerhard Klimeck; Mehdi Salmani Jelodar (2014), "OMEN_FET," http://nanohub.org/resources/omenhfet. (DOI: 10.4231/D3SN0151Z).

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