Illinois Tools: PN Junction Long-Base Depletion Approximation

By Nahil Sobh1; Mohamed Mohamed1

1. University of Illinois at Urbana-Champaign

Depletion Approximation for a PN Junction

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Version 2.5a - published on 13 Aug 2014

doi:10.4231/D3RJ48V9V cite this

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Abstract

The PN Junction: Long-Base Depletion Approximation tool is used to approximately calculate and then graph the distribution in an p- and n-type junction of:
  • Charge Density
  • Electric Field Intensity
  • Electrostatic Potential
  • Excess Carrier Concentration
  • Current Density
  • Current Density Amplitude
  • Depletion Width
  • Max Excess Hole Concentration
  • Max Excess Electrons Concentration
  • Junction Capacitance
  • 1 / C^2

References

  • Si and Ge intrinsic carrier values are based on Thurmond's paper: The Standard Thermodynamics Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP
  • GaAs intrinsic carrier values are based on Blakemore's paper: Semiconducting and other major properties of gallium arsenide
  • For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition
  • The permittivity of semicondutors are given in: http://www.iue.tuwien.ac.at/phd/palankovski/node32.html

Cite this work

Researchers should cite this work as follows:

  • Nahil Sobh, Mohamed Mohamed (2014), "Illinois Tools: PN Junction Long-Base Depletion Approximation," https://nanohub.org/resources/pnlongbasedda. (DOI: 10.4231/D3RJ48V9V).

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