• Charge Density
• Electric Field Intensity
• Electrostatic Potential
• Excess Carrier Concentration
• Current Density
• Current Density Amplitude
• Depletion Width
• Max Excess Hole Concentration
• Max Excess Electrons Concentration
• Junction Capacitance
• 1 / C^2

• Si and Ge intrinsic carrier values are based on Thurmond's paper: The Standard Thermodynamics Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP
  
• GaAs intrinsic carrier values are based on Blakemore's paper: Semiconducting and other major properties of gallium arsenide
  
• For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition
  
• The permittivity of semicondutors are given in:
  http://www.iue.tuwien.ac.at/phd/palankovski/node32.html

Researchers should cite this work as follows:

• Nahil Sobh; Mohamed Mohamed (2009), "PN Junction Long-Base Depletion Approximation," http://nanohub.org/resources/pnlongbasedda. (DOI: 10254/nanohub-r5121.3).

  BibTex | EndNote

1. depletion 1
2. depletion approximation 1
3. long base 1
4. nanoelectronics 1
5. NCN@Illinois Supported 1
6. NCN Supported 1
7. np 1
8. np-junction 1
9. pn 1
10. pn-junction 1