You must login before you can run this tool.
Illinois Tools: PN Junction Long-Base Depletion Approximation
Depletion Approximation for a PN Junction
Category
Published on
Abstract
The PN Junction: Long-Base Depletion Approximation tool is used
to approximately calculate and then graph the distribution in an
p- and n-type junction of:
- Charge Density
- Electric Field Intensity
- Electrostatic Potential
- Excess Carrier Concentration
- Current Density
- Current Density Amplitude
- Depletion Width
- Max Excess Hole Concentration
- Max Excess Electrons Concentration
- Junction Capacitance
- 1 / C^2
References
- Si and Ge intrinsic carrier values are based on Thurmond's paper: The Standard Thermodynamics Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP
- GaAs intrinsic carrier values are based on Blakemore's paper: Semiconducting and other major properties of gallium arsenide
- For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition
- The permittivity of semicondutors are given in: http://www.iue.tuwien.ac.at/phd/palankovski/node32.html
Cite this work
Researchers should cite this work as follows: