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The PN Junction: Long-Base Depletion Approximation tool is used to approximately calculate and then graph the distribution in an p- and n-type junction of:
Charge Density Electric Field Intensity Electrostatic Potential Excess Carrier Concentration Current Density Current Density Amplitude Depletion Width Max Excess Hole Concentration Max Excess Electrons Concentration Junction Capacitance
- Si and Ge intrinsic carrier values are based on Thurmond's paper: The Standard Thermodynamics Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP
- GaAs intrinsic carrier values are based on Blakemore's paper: Semiconducting and other major properties of gallium arsenide
- For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition
- The permittivity of semicondutors are given in: http://www.iue.tuwien.ac.at/phd/palankovski/node32.html
Researchers should cite this work as follows: