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PN Junction Short-Base Depletion Approximation

By Nahil Sobh1, Mohamed Mohamed1

1. University of Illinois at Urbana-Champaign

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Version 2.5 - published on 15 Jan 2009

doi:10.4231/D3XS5JG7M cite this

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Abstract

This model is valid under the assumption that the width of the n-region is sufficiently small so that injected minority carriers diffuse to the metal contact before recombining with majority carriers. ( Depletion Width

References

  • Si and Ge intrinsic carrier values are based on Thurmond's paper: The Standard Thermodynamics Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP
  • GaAs intrinsic carrier values are based on Blakemore's paper: Semiconducting and other major properties of gallium arsenide
  • For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition

Cite this work

Researchers should cite this work as follows:

  • Nahil Sobh; Mohamed Mohamed (2009), "PN Junction Short-Base Depletion Approximation," http://nanohub.org/resources/pnshortbasedda. (DOI: 10.4231/D3XS5JG7M).

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