Notes on Fermi-Dirac Integrals (3rd Edition)
23 Sep 2008 | Publications | Contributor(s): Raseong Kim, Mark Lundstrom
Fermi-Dirac integrals appear frequently in semiconductor problems, so an understanding of their properties is essential. The purpose of these notes is to collect in one place, some basic information about Fermi-Dirac integrals and their properties.
We also present Matlab functions (in a zipped …
Summary of current status of industrial nanocomposite developments
25 Jul 2008 | Publications | Contributor(s): Steven L. Masia
This is a brief summary of the current nanocomposites developed and provided by industry as of July 2008. A variety of industrial references are provided.
Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006 | Publications | Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan-
tum mechanical effects begin to manifest themselves and affect important device
performance metrics. Therefore, simulation tools which can be applied to design
nanoscale transistors in the future, require new …
Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006 | Publications | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube
electronic devices and in identifying potential applications has occurred. In a nanotube,
low bias transport can be nearly ballistic across distances of several hundred nanometers.
Deposition of high-κ …
Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006 | Publications | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale
transistors at the quantum level. The principle topics addressed in this report are 1) an
implementation of appropriate physics and methodology in device modeling, 2)
development of a new TCAD (technology computer …
Introduction to the Keldysh Nonequilibrium Green Function Technique
06 Oct 2006 | Publications | Contributor(s): A. P. Jauho
Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems.
The technique is somewhat subtle, and a rigorous treatment would require much more than we have at our disposal, see, for example, the text-bookk by Haug and Jauho .
Towards Multi-Scale Modeling of Carbon Nanotube Transistors
20 Sep 2006 | Publications | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram
Multiscale simulation approaches are needed in order to address scientific and technological
questions in the rapidly developing field of carbon nanotube electronics. In this paper, we
describe an effort underway to develop a comprehensive capability for multiscale simulation of
Nanoscale Device Modeling: From MOSFETs to Molecules
20 Sep 2006 | Publications | Contributor(s): Prashant Subhash Damle
This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices.
As convetional metal oxide semiconductor devices shrink below the one hundred nanometer regime, quantum mechanical effects are beginning to play an increasingly important role in …
Quantum Transport for Nanostructures
17 Sep 2006 | Publications | Contributor(s): Mathieu Luisier
Nonequilibrium Green's function techniques, initiated by Schwinger and Kadanoff
and Baym allow ones to study the time evolution of a many-particle quantum sys-
tem. Knowing the 1-particle Green's functions of a given system, one may evaluate
1-particle quantities like carrier density or …
Device Physics and Simulation of Silicon Nanowire Transistors
20 May 2006 | Publications | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry …