Device Physics and Simulation of Silicon Nanowire Transistors

20 May 2006 | Publications | Contributor(s): Jing Wang

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry …

Quantum Transport for Nanostructures

17 Sep 2006 | Publications | Contributor(s): Mathieu Luisier

Nonequilibrium Green's function techniques, initiated by Schwinger and Kadanoff and Baym allow ones to study the time evolution of a many-particle quantum sys- tem. Knowing the 1-particle Green's functions of a given system, one may evaluate 1-particle quantities like carrier density or …

Towards Multi-Scale Modeling of Carbon Nanotube Transistors

21 Sep 2006 | Publications | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram

Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon …

Introduction to the Keldysh Nonequilibrium Green Function Technique

06 Oct 2006 | Publications | Contributor(s): A. P. Jauho

Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems. The technique is somewhat subtle, and a rigorous treatment would require much more than we have at our disposal, see, for example, the text-bookk by Haug and Jauho [1]. The …

Nanoscale MOSFETs: Physics, Simulation and Design

26 Oct 2006 | Publications | Contributor(s): Zhibin Ren

This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer …

Carbon Nanotube Electronics: Modeling, Physics, and Applications

30 Oct 2006 | Publications | Contributor(s): Jing Guo

In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ …

Modeling Quantum Transport in Nanoscale Transistors

30 Oct 2006 | Publications | Contributor(s): ramesh venugopal

As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new …

Nanoscale Device Modeling: From MOSFETs to Molecules

21 Sep 2006 | Publications | Contributor(s): Prashant Subhash Damle

This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices. As convetional metal oxide semiconductor devices shrink below the one hundred nanometer regime, quantum mechanical effects are beginning to play an increasingly important role in …

Notes on the Ballistic MOSFET

21 Nov 2005 | Publications | Contributor(s): Mark Lundstrom

When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the so-called mean-free-path, λ) is much shorter than the device. …

nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs

06 Oct 2006 | Publications | Contributor(s): Zhibin Ren, ramesh venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space …