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## Resonant Tunneling Diode Simulator

Simulate 1D resonant tunneling devices and other heterostructures via ballistic quantum transport

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#### Abstract

Heterostructure devices have thin layers of alternating materials. Some layers act as barriers to electron flow, but if the layers are thin enough, electrons can "tunnel" through them. If two or more barriers are placed closely together, electrons can reflect between the barriers and resonate at particular energies, allowing complete transmission through the barriers, as if they were not there! This gives rise to negative differential resistance--current that goes down as voltage goes up--an interesting behavior that can be harnessed to form new devices.

Use this tool to explore the effects of tunneling through one or more material layers. Change the doping density, material properties, and layer thicknesses, and examine transmission coefficients and current-voltage relationships.

This simulator does not take into account space-charge effects associated with the electrostatic potential, and therefore does not accurately simulate real-world devices. It produces only qualitative results and is intended for instructional use only.

#### Powered by

SEQUAL 2.1 is a device simulation program that computes Semiconductor

Electrostatics by Quantum Analysis. Given a device, SEQUAL will compute

the electron density and the current density using a quantum mechanical,

collisionless description of electron propagation. SEQUAL is based on

the formulation of M. Cahay, M. McLennan, S. Datta, and M. S. Lundstrom,

"Importance of Space-Charge Effects in Resonant Tunneling Devices,"

Applied Physics Letters, vol. 50 (10), pp. 612-614, 1987.

#### References

"Importance of Space-Charge Effects in Resonant Tunneling Devices,"

Applied Physics Letters, vol. 50 (10), pp. 612-614, 1987.

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