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You are here: ResourcesToolsResonant Tunneling Diode Simulation with NEGFUsage

Resonant Tunneling Diode Simulation with NEGF

By Jean Michel D Sellier1, Samarth Agarwal2, Mathieu Luisier2, Zhengping Jiang2, Michael McLennan2, Gerhard Klimeck2

1. Purdue University - West Lafayette; 2. Purdue University, West Lafayette;

Simulate 1D RTDs using NEGF.

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Version 1.3.5 - published on 12 Feb 2010

DOI: 10254/nanohub-r5237.28 cite this

This tool is closed source.

First-Time User Guide View All Supporting Documents

Usage

Table 1: Overview
Item Average Total
Simulation Users: - 379
Interactive Sessions: - 1,742
Simulation Sessions: - 4,621
Simulation Runs: - 6,363
Wall Time: 1.7 hours 327.07 days
CPU time: 1.65 minutes 5.28 days
Interaction Time: 57.33 minutes 183.97 days

Table 2: Users By Organization Type
# Type Users Percent
1 Educational - University 340 89.71
2 Unidentified 18 4.75
3 Industry 10 2.64
4 National Lab 5 1.32
5 Unemployed 2 0.53
6 Educational - Pre-College 2 0.53
7 Military 1 0.26
8 Government Agency 1 0.26
Total Users 379 100
Table 3: Users by Country of Residence
# Country Users Percent
1 United States 120 31.66
2 Sweden 41 10.82
3 Czech Republic 34 8.97
4 China 19 5.01
5 Italy 18 4.75
6 India 17 4.49
7 Germany 15 3.96
8 Romania 10 2.64
9 Canada 9 2.37
10 Guatemala 9 2.37
Total Users 379 100
Table 4: Top Domains by User Count
# Domains Users Percent
1 Unidentified 96 25.33
2 vutbr.cz 44 11.61
3 thecloud.net 35 9.23
4 purdue.edu 26 6.86
5 rr.com 16 4.22
6 comcast.net 14 3.69
7 mcgill.ca 9 2.37
8 unipi.it 8 2.11
9 stanford.edu 7 1.85
10 intelnet.net.gt 7 1.85
Total Users 379 100

Location of all "Resonant Tunneling Diode Simulation with NEGF" Users Since Its Posting

Map

Supporting Documents

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