Schottky-Barrier CNFET

By Arash Hazeghi1, Tejas Krishnamohan1, H.-S. Philip Wong1

1. Stanford University

Simulate Carbon Nanotube field Effect transistor with Schottky Barriers

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Version 1.1.1w - published on 17 Mar 2015

doi:10.4231/D3R49G98F cite this

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This tool is based on the ballistic transport in CNTs which are believed to have scattering lengths in excess of a hundred nanometers. Features such as the Schottky barriers (SBs) at the source/drain (S/D) contacts, band-to-band tunneling (BTBT) current, and ambipolar conduction are condsidered in this tool.


Thanks to Samuel Chang for his contributions in code optimization.

This work was supported in part by the Charles Powell Foundation, in part by the National Science Foundation under Grant ECS-0501096, and in part by the Microelectronics Advanced Research Corporation Functional Engineered Nano Architectonics Focus Research Center Program. We would also like to thank Prof. M. Lundstrom of Purdue University and Prof. J. Guo of the University of Florida for the reading of the manuscript and their constructive comments.

Cite this work

Researchers should cite this work as follows:

  • "Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling", IEEE Transactions on Electron Devices, VOL. 54, NO. 3, March 2007 P. 439- 445

  • Arash Hazeghi; Tejas Krishnamohan; H.-S. Philip Wong (2015), "Schottky-Barrier CNFET," (DOI: 10.21981/D3R49G98F).

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