Support

Support Options

Submit a Support Ticket

 
Home › Resources › Tools › Schottky-Barrier CNFET › Supporting Docs
This resource has a 8.4 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Total: updated 18 May 2013
Users: 716
Jobs: 4210
Avg. exec. time: 2 mins
Reviews & Citations
Google/IEEE: updated 22 Apr 2010
Avg. Review: 4.0 out of 5 stars
Citations: 3
  •  
  •  
  •  
  •  
  •  
  • Advanced
Difficulty Level Target Audience
  •  
  •  
  •  
  •  
  •  
 K-12 Middle/High School
  •  
  •  
  •  
  •  
  •  
 Easy Freshmen/Sophomores
  •  
  •  
  •  
  •  
  •  
 Intermediate Juniors/Seniors
  •  
  •  
  •  
  •  
  •  
 Advanced Graduate Students
  •  
  •  
  •  
  •  
  •  
 Expert PhD Experts

Learn more ›

716 users, detailed usage

22 users in 6 classes

1 Citation(s)

7 questions (Ask a question)

2 review(s) (Review this)

1 wish(es) (Add a new wish)

Schottky-Barrier CNFET

By Arash Hazeghi1, Tejas Krishnamohan1, H.-S. Philip Wong1

1. Stanford University

Simulate Carbon Nanotube field Effect transistor with Schottky Barriers

Launch Tool

You must login before you can run this tool.

Version 1.1.1 - published on 20 Oct 2009

doi:10.4231/D3TH8BM7C cite this

This tool is closed source.

View All Supporting Documents

See also

No results found.

Supporting Docs

[ none ]

Get Help

Get Involved

Legal

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies.