By Dragica Vasileska1, Shaikh S. Ahmed2, Gokula Kannan1, Matteo Mannino3, Gerhard Klimeck3, Mark Lundstrom3, Akira Matsudaira4, Junzhe Geng3

1. Arizona State University 2. Southern Illinois University Carbondale 3. Purdue University 4. University of Illinois at Urbana-Champaign

SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.

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Version 2.55 - published on 18 Sep 2015

doi:10.4231/D34T6F441 cite this

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Schred calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS (Metal-Oxide-Semiconductor) or SOS (Semiconductor-Oxide-Semiconductor) structure and a typical SOI (semiconductor-Oxide_Insulator) structure by solving self-consistently the one-dimensional (1D) Poisson equation and the 1D Schrodinger equation.

To better understand the operation of SCHRED tool and the physics of MOS capacitors please refer to:


Gokula Kannan, Dragica Vasileska, “Schred V2.0 - Tool to model MOS Capacitors”, 14th International Workshop on Computational Electronics (IWCE), pp.1-4, Dec. 2010

Cite this work

Researchers should cite this work as follows:

  • D. Vasileska, D. K. Schroder and D.K. Ferry, “Scaled silicon MOSFET’s: Part II - Degradation of the total gate capacitance”, IEEE Trans. Electron Devices 44, 584-7 (1997).

  • Dragica Vasileska; Shaikh S. Ahmed; Gokula Kannan; Matteo Mannino; Gerhard Klimeck; Mark Lundstrom; Akira Matsudaira; Junzhe Geng (2015), "Schred," (DOI: 10.4231/D34T6F441).

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