calculates the envelope wavefunctions and the
corresponding bound-state energies in a typical MOS (Metal-Oxide-Semiconductor)
or SOS (Semiconductor-Oxide-Semiconductor) structure and a typical SOI (semiconductor-Oxide_Insulator)
structure by solving self-consistently the one-dimensional (1D) Poisson
equation and the 1D Schrodinger equation.
To better understand the operation of SCHRED tool and the physics of MOS capacitors please refer to:
MOS Capacitors Operation Description
How Quantum-Mechanical Space-Quantization is Implemented in SCHRED, Drift-Diffusion (SILVACO ATLAS) and Particle-Based Device Simulators (Quamc2D)
SCHRED - Exercise 1
SCHRED - Exercise 2
SCHRED - Exercise 3
The source code of Schred has been attached as a file name "src.zip" and can be found under the Supporting Documents tab.
Gokula Kannan, Dragica Vasileska, “Schred V2.0 - Tool to model MOS Capacitors”, 14th International Workshop on Computational Electronics (IWCE), pp.1-4, Dec. 2010
Researchers should cite this work as follows:
D. Vasileska, D. K. Schroder and D.K. Ferry, “Scaled silicon MOSFET’s: Part II - Degradation of the total gate capacitance”, IEEE Trans. Electron Devices 44, 584-7 (1997).
Dragica Vasileska; Shaikh S. Ahmed; Gokula Kannan; Matteo Mannino; Gerhard Klimeck; Mark Lundstrom; Akira Matsudaira; Junzhe Geng (2014), "Schred," http://nanohub.org/resources/schred. (DOI: 10.4231/D3RV0D17C).